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2SC1953

Small Signal Bipolar Transistor

Inventory:7,937

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Overview of 2SC1953

The 2SC1953 is a NPN epitaxial silicon RF transistor designed for high-frequency applications such as RF amplification and oscillation. This transistor offers high power gain and low noise figure, making it suitable for use in radio frequency circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • B: Base
  • C: Collector
  • E: Emitter

Circuit Diagram

Include a circuit diagram showing the configuration and usage of the 2SC1953 transistor for better understanding.

Key Features

  • High Frequency Operation: The 2SC1953 is designed to operate at high frequencies, ideal for RF applications.
  • High Power Gain: This transistor offers a high power gain, improving signal strength in RF circuits.
  • Low Noise Figure: With a low noise figure, the 2SC1953 helps maintain signal clarity in communication systems.
  • Epitaxial Silicon Construction: The epitaxial silicon technology used in the 2SC1953 ensures stable and reliable performance.
  • Compact Package: Available in a small form factor, the 2SC1953 is suitable for space-constrained designs.

Note: Refer to the 2SC1953 datasheet for detailed technical specifications and performance characteristics.

Application

  • RF Amplification: The 2SC1953 is commonly used for RF amplification in radio transmitters, receivers, and transceivers.
  • Oscillator Circuits: Suitable for oscillator circuits that require stable frequency generation in RF systems.
  • Communication Systems: Ideal for use in communication systems that operate at high frequencies.

Functionality

The 2SC1953 NPN transistor is designed to amplify high-frequency signals with low noise and high power gain. It is a key component in RF circuits for signal amplification and oscillation.

Usage Guide

  • Connection: Connect the base(B), collector(C), and emitter(E) pins of the transistor according to the circuit requirements.
  • Biasing: Apply the appropriate biasing voltage and current to ensure proper transistor operation.
  • Matching Impedance: Match the input and output impedances for optimal performance in RF circuits.

Frequently Asked Questions

Q: What is the maximum frequency range for the 2SC1953?
A: The 2SC1953 operates effectively in the frequency range of X to Y MHz.

Q: Is the 2SC1953 suitable for high-power RF applications?
A: Yes, the 2SC1953 can handle high power levels and is suitable for high-power RF amplification.

Equivalent

For similar RF transistor options, consider these alternatives to the 2SC1953:

  • 2N3904: A general-purpose NPN transistor suitable for low-power amplification tasks.
  • 2N2219: An RF transistor with similar characteristics to the 2SC1953, offering high-frequency performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Obsolete
Transistor Type NPN Current - Collector (Ic) (Max) 50 mA
Voltage - Collector Emitter Breakdown (Max) 150 V Vce Saturation (Max) @ Ib, Ic 1V @ 3mA, 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 130 @ 10mA, 5V Power - Max 1 W
Frequency - Transition 70MHz Operating Temperature 150°C (TJ)
Mounting Type Through Hole Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126B-A1 Base Product Number 2SC195

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2SC1953

Small Signal Bipolar Transistor

Inventory:

7,937