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2SC0108T2F1-17

IGBTs, 8A, 17ns, 15.5V

Inventory:7,745

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Overview of 2SC0108T2F1-17

The 2SC0108T2F1-17 is a Gate Driver optimized for high current capacity, fast switching speed, and low saturation voltage. It provides excellent performance for audio amplifiers and other high-power electronic applications.

Pinout

The 2SC0108T2F1-17 pinout refers to the configuration and function of each pin in its Module package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the 2SC0108T2F1-17 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • High current capacity and fast switching speed: The 2SC0108T2F1-17 is designed for high-power applications, providing a high current capacity and fast switching speed to ensure efficient performance.
  • Low saturation voltage for efficient performance: This transistor features low saturation voltage, which helps to reduce power consumption and increase overall efficiency in audio amplifiers and other electronic devices.
  • Small package size for space-saving designs: The Module package of the 2SC0108T2F1-17 is designed to be compact, making it ideal for applications where space is limited.
  • Designed for use in audio amplifiers and other high-power electronic applications: This gate driver is specifically designed for use in high-power applications such as audio amplifiers, radar systems, and microwave devices.
  • RoHS compliant for environmental sustainability: The 2SC0108T2F1-17 is RoHS compliant, ensuring that it meets the European Union's regulations on the use of hazardous substances in electronic components.

Applications

  • RF Power Amplifiers: The 2SC0108T2F1-17 can be used in RF power amplifiers to boost the signal strength for wireless communication applications.
  • Radar Systems: This transistor is suitable for radar systems where high power output and efficiency are required.
  • Microwave Applications: The 2SC0108T2F1-17 can be utilized in microwave devices such as microwave ovens and radar systems for signal amplification.

Frequently Asked Questions

Q: Can the 2SC0108T2F1-17 be used in audio amplifiers?
A: Yes, the 2SC0108T2F1-17 can be used in audio amplifiers due to its high current capacity and low saturation voltage.

Q: Is the 2SC0108T2F1-17 RoHS compliant?
A: Yes, the 2SC0108T2F1-17 is RoHS compliant, ensuring that it meets the European Union's regulations on the use of hazardous substances in electronic components.

Q: What are some common applications for the 2SC0108T2F1-17?
A: The 2SC0108T2F1-17 is commonly used in RF power amplifiers, radar systems, and microwave devices due to its high current capacity and low saturation voltage.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SCALE™-2+ Package Tray
Product Status Active Programmabe Not Verified
Driven Configuration High-Side or Low-Side Channel Type Independent
Number of Drivers 2 Gate Type IGBT
Voltage - Supply 14.5V ~ 15.5V Current - Peak Output (Source, Sink) 8A, 8A
High Side Voltage - Max (Bootstrap) 1700 V Rise / Fall Time (Typ) 17ns, 15ns
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case Module Supplier Device Package Module
Base Product Number 2SC0108

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