2SA1941-O(Q)
PNP Bipolar Junction Transistors (BJT) designed for applications requiring a voltage rating of -140V
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.790 | $0.79 |
10 | $0.646 | $6.46 |
30 | $0.575 | $17.25 |
100 | $0.503 | $50.30 |
500 | $0.462 | $231.00 |
1000 | $0.439 | $439.00 |
Inventory:8,422
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Part Number : 2SA1941-O(Q)
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Package/Case : TO3P
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Manufacturer : Toshiba Semiconductor And Storage
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Components Classification : Single Bipolar Transistors
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Datesheet : 2SA1941-O(Q) DataSheet (PDF)
The 2SA1941-O(Q) is a PNP silicon power transistor designed for high-voltage switching and amplifier applications. It features a high current and power handling capability, making it suitable for various circuit designs requiring robust performance. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the 2SA1941-O(Q) transistor for visual reference. Note: For detailed technical specifications, please refer to the 2SA1941-O(Q) datasheet. Functionality The 2SA1941-O(Q) is a PNP silicon power transistor that provides high current and voltage handling capabilities, making it versatile for various power-related applications. Usage Guide For similar functionalities, consider these alternatives to the 2SA1941-O(Q):Overview of 2SA1941-O(Q)
Pinout
Circuit Diagram
Key Features
Application
Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | Through Hole | Transistor Polarity | PNP |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 140 V |
Collector- Base Voltage VCBO | 140 V | Emitter- Base Voltage VEBO | 5 V |
Collector-Emitter Saturation Voltage | 800 mV | Maximum DC Collector Current | 10 A |
Pd - Power Dissipation | 100 W | Gain Bandwidth Product fT | 30 MHz |
Maximum Operating Temperature | + 150 C | Brand | Toshiba |
Continuous Collector Current | 10 A | DC Collector/Base Gain hfe Min | 35 |
DC Current Gain hFE Max | 83 | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 4000 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.165788 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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2SA1941-O(Q)
PNP Bipolar Junction Transistors (BJT) designed for applications requiring a voltage rating of -140V
Inventory:
8,422Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.
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