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2SA1941-O(Q)

PNP Bipolar Junction Transistors (BJT) designed for applications requiring a voltage rating of -140V

Quantity Unit Price(USD) Ext. Price
1 $0.790 $0.79
10 $0.646 $6.46
30 $0.575 $17.25
100 $0.503 $50.30
500 $0.462 $231.00
1000 $0.439 $439.00

Inventory:8,422

*The price is for reference only.
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Overview of 2SA1941-O(Q)

The 2SA1941-O(Q) is a PNP silicon power transistor designed for high-voltage switching and amplifier applications. It features a high current and power handling capability, making it suitable for various circuit designs requiring robust performance.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • C: Collector
  • B: Base

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SA1941-O(Q) transistor for visual reference.

Key Features

  • PNP Silicon Power Transistor: The 2SA1941-O(Q) is a PNP type transistor suitable for power applications.
  • High Voltage Capability: This transistor can handle high voltages, making it ideal for switching high-power circuits.
  • High Current Rating: With its high current rating, the 2SA1941-O(Q) is capable of handling significant power loads.
  • Robust Construction: Designed for reliability, this transistor is built to withstand demanding operating conditions.

Note: For detailed technical specifications, please refer to the 2SA1941-O(Q) datasheet.

Application

  • Power Amplification: The 2SA1941-O(Q) is commonly used in power amplifier circuits for audio or other high-power applications.
  • Switching Circuits: Suitable for use in high-voltage switching circuits requiring a PNP power transistor.
  • Regulated Power Supplies: This transistor can be utilized in regulated power supply designs for stable voltage output.

Functionality

The 2SA1941-O(Q) is a PNP silicon power transistor that provides high current and voltage handling capabilities, making it versatile for various power-related applications.

Usage Guide

  • Pin Connections: Connect the Emitter (E), Collector (C), and Base (B) pins as per the circuit requirements.
  • Heat Dissipation: Proper heat sinking is essential to ensure the transistor operates within its specified temperature limits.
  • Driving Circuit: Ensure proper biasing and drive conditions for optimal performance of the 2SA1941-O(Q) in the circuit.

Equivalent

For similar functionalities, consider these alternatives to the 2SA1941-O(Q):

  • 2SC5200: A complementary NPN power transistor that can be used in conjunction with the 2SA1941-O(Q) in amplifier designs.
  • MJL3281A: This high-power PNP transistor offers comparable performance characteristics to the 2SA1941-O(Q) for demanding applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style Through Hole Transistor Polarity PNP
Configuration Single Collector- Emitter Voltage VCEO Max 140 V
Collector- Base Voltage VCBO 140 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 800 mV Maximum DC Collector Current 10 A
Pd - Power Dissipation 100 W Gain Bandwidth Product fT 30 MHz
Maximum Operating Temperature + 150 C Brand Toshiba
Continuous Collector Current 10 A DC Collector/Base Gain hfe Min 35
DC Current Gain hFE Max 83 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 4000 Subcategory Transistors
Technology Si Unit Weight 0.165788 oz

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2SA1941-O(Q)

PNP Bipolar Junction Transistors (BJT) designed for applications requiring a voltage rating of -140V

Inventory:

8,422