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2SA1797T100Q

A member of the 2SA1797 Series

Quantity Unit Price(USD) Ext. Price
5 $0.215 $1.08
50 $0.174 $8.70
150 $0.156 $23.40
1000 $0.133 $133.00
2000 $0.123 $246.00
5000 $0.117 $585.00

Inventory:9,089

*The price is for reference only.
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Overview of 2SA1797T100Q

The 2SA1797T100Q is a PNP epitaxial silicon transistor designed for high-voltage applications in electronic circuits. This transistor features a maximum collector-emitter voltage of 100V and a continuous collector current of 500mA, making it suitable for amplification and switching tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SA1797T100Q transistor for a visual representation.

Key Features

  • High Voltage Capability: With a maximum collector-emitter voltage of 100V, this transistor can be used in high-voltage circuits.
  • Medium Power Amplification: The 2SA1797T100Q is capable of handling continuous collector currents of up to 500mA, making it suitable for medium-power amplification applications.
  • PNP Epitaxial Silicon Transistor: This transistor is built with PNP epitaxial silicon technology, offering reliable performance and high conductivity.
  • Compact TO-92 Package: The 2SA1797T100Q comes in a TO-92 package, providing a convenient and compact form factor for easy circuit integration.

Note: For detailed technical specifications, please refer to the 2SA1797T100Q datasheet.

Application

  • Audio Amplification: Ideal for use in audio amplifier circuits due to its medium power handling capabilities.
  • Switching Circuits: Can be employed in switching circuits to control high-voltage loads.
  • Voltage Regulation: Suitable for voltage regulation tasks in electronic systems.

Functionality

The 2SA1797T100Q PNP transistor is designed to amplify electrical signals and control high-voltage loads in electronic circuits. It offers reliability and performance for various applications.

Usage Guide

  • Emitter Connection: Connect the emitter (E) to the ground or reference point in the circuit.
  • Base Input: Apply the input signal or control voltage to the base (B) terminal to control the transistor's operation.
  • Collector Output: Use the collector (C) connection to interface with the load or next stage of the circuit.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage of the 2SA1797T100Q transistor?
A: The 2SA1797T100Q can handle a maximum collector-emitter voltage of 100V.

Q: Can the 2SA1797T100Q be used in audio amplifier circuits?
A: Yes, the 2SA1797T100Q is suitable for audio amplification applications due to its medium power handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the 2SA1797T100Q:

  • 2SA1012: A PNP transistor with comparable voltage and current ratings for high-voltage applications.
  • 2SA1943: This transistor offers higher power dissipation capabilities and is suitable for demanding amplification tasks.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Transistor Polarity PNP
Configuration Single Collector- Emitter Voltage VCEO Max 50 V
Collector- Base Voltage VCBO 50 V Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 150 mV Maximum DC Collector Current 3 A
Pd - Power Dissipation 2 W Gain Bandwidth Product fT 200 MHz
Maximum Operating Temperature + 150 C Brand ROHM Semiconductor
Continuous Collector Current - 2 A DC Collector/Base Gain hfe Min 82
DC Current Gain hFE Max 270 Height 1.5 mm
Length 4.5 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1000 Subcategory Transistors
Technology Si Width 2.5 mm
Unit Weight 0.005988 oz

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2SA1797T100Q

A member of the 2SA1797 Series

Inventory:

9,089