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2SA1507S

1500mW Power Dissipation PNP Bipolar Junction Transistor in 3-Pin TO-126ML Package

Inventory:5,811

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Overview of 2SA1507S

The 2SA1507S is a Power Bipolar Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.

Pinout

The 2SA1507S pinout refers to the configuration and function of each pin in its TO-126ML package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the 2SA1507S has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Bipolar (BJT) Transistor: The 2SA1507S is a bipolar junction transistor that operates based on the flow of current between its base, collector, and emitter terminals.
  • PNP Configuration: This transistor has a PNP configuration, meaning it can amplify or switch positive voltage signals.
  • 160V Collector-Emitter Voltage: The 2SA1507S has a maximum collector-emitter voltage rating of 160V, making it suitable for high-voltage applications.
  • 1.5A Collector Current: This transistor can handle up to 1.5A of collector current, allowing for efficient power switching and amplification.
  • 120MHz Frequency Response: The 2SA1507S has a frequency response of up to 120MHz, making it suitable for high-frequency applications such as radio frequency (RF) amplifiers and switches.
  • 1.5W Power Dissipation: This transistor can dissipate up to 1.5W of power, allowing for efficient energy transfer in high-power applications.

Applications

  • Analog Signal Switching: The 2SA1507S is suitable for analog signal switching applications where high-speed and low-voltage operations are required.
  • Digital Signal Amplification: This transistor can be used to amplify digital signals in high-frequency applications such as radio frequency (RF) amplifiers and switches.
  • Power Supply Applications: The 2SA1507S is suitable for power supply applications where high-voltage and high-current operations are required.

Advantages and Disadvantages

Advantages

  • High-Speed Operation: The 2SA1507S can operate at high speeds, making it suitable for applications where fast switching is required.
  • Low-Voltage Operations: This transistor can operate at low voltages, making it suitable for battery-powered or low-voltage applications.

Disadvantages

  • Sensitivity to Temperature: The 2SA1507S may be sensitive to temperature changes, which can affect its performance and reliability.
  • Limited Current Handling: This transistor has a limited current handling capacity, making it unsuitable for high-current applications.

Equivalents

For similar functionalities, consider these alternatives to the 2SA1507S:

  • 2N3906: This transistor has a similar configuration and performance characteristics as the 2SA1507S.
  • BC557A: This transistor is another PNP bipolar junction transistor that can be used in place of the 2SA1507S.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage rating of the 2SA1507S?
A: The maximum collector-emitter voltage rating of the 2SA1507S is 160V.

Q: Can the 2SA1507S handle high currents?
A: No, the 2SA1507S has a limited current handling capacity and is not suitable for high-current applications.

Q: What is the frequency response of the 2SA1507S?
A: The frequency response of the 2SA1507S is up to 120MHz.

Q: Is the 2SA1507S suitable for digital signal amplification?
A: Yes, the 2SA1507S can be used to amplify digital signals in high-frequency applications such as radio frequency (RF) amplifiers and switches.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Obsolete
Transistor Type PNP Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 160 V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Power - Max 1.5 W Frequency - Transition 120MHz
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-126ML
Base Product Number 2SA1507

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2SA1507S

1500mW Power Dissipation PNP Bipolar Junction Transistor in 3-Pin TO-126ML Package

Inventory:

5,811