• 2N7002Q-7-F
2N7002Q-7-F

2N7002Q-7-F

Product 2N7002Q-7-F is compliant with ROHS regulations, ensuring environmental sustainability

Quantity Unit Price(USD) Ext. Price
10 $0.031 $0.31
100 $0.025 $2.50
300 $0.022 $6.60
3000 $0.020 $60.00
6000 $0.018 $108.00
9000 $0.017 $153.00

Inventory:7,976

*The price is for reference only.
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Overview of 2N7002Q-7-F

2N7002Q-7-F is a MOSFET optimized for its high speed and low voltage operations. It provides excellent performance for analog and digital signal switching.

Pinout

The 2N7002Q-7-F pinout refers to the configuration and function of each pin in its SOT-23 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the 2N7002Q-7-F has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Silicon SMT Mosfet: This component is a silicon-based MOSFET optimized for surface-mount technology (SMT) integration.
  • Single N-Channel: The 2N7002Q-7-F has a single N-channel configuration, suitable for applications that require this type of electrical characteristic.
  • 60V Operation: This MOSFET is designed to operate at a maximum voltage rating of 60V.
  • 13.5 Ohm Drain Source Resistance: The component has a drain-source resistance of 13.5 ohms, which determines its ability to conduct current when the gate-to-source voltage is applied.
  • 223 pC Input Capacitance: The input capacitance of this MOSFET is 223pF, making it suitable for circuits that require low power consumption and high-frequency switching.
  • 540 mW Power dissipation: This component has a maximum power dissipation of 540mW, ensuring that it can handle the required current and voltage without overheating or degrading its performance.

Applications

  • Analog Signal Processing: The 2N7002Q-7-F can be used in analog signal processing circuits where high-speed switching and low-power consumption are required.
  • Digital Signal Processing: This component is suitable for digital signal processing applications where high-frequency switching and precise control are necessary.
  • Power Management Systems: The 2N7002Q-7-F can be used in power management systems, such as DC-DC converters and power supplies, where voltage regulation and control are essential.

Equivalents

For similar functionalities, consider these alternatives to the 2N7002Q-7-F:

  • STP16NF06L: This is a high-voltage N-channel MOSFET that can be used as an equivalent in certain applications.

Frequently Asked Questions

Q: What is the maximum voltage rating of 2N7002Q-7-F?
A: The component has a maximum voltage rating of 60V.

Q: What is the input capacitance of 2N7002Q-7-F?
A: The input capacitance of this MOSFET is 223pF.

Q: Can I use 2N7002Q-7-F in high-frequency applications?
A: Yes, the component provides excellent high-frequency performance and can be used in applications that require fast switching times.

2N7002Q-7-F

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Diodes Incorporated Product Category IC Chips
Mfr Diodes Incorporated Series Automotive AEC-Q101
Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel® Product-Status Active
FET-Type N-Channel Technology 170mA (Ta)
Drain-to-Source-Voltage-Vdss 2.5V @ 250µA Current-Continuous-Drain-Id-25°C 0.233 nC @ 10 V
Drive-Voltage-Max-Rds-On-Min-Rds-On - Rds-On-Max-Id-Vgs 370mW (Ta)
Vgs-th-Max-Id -55°C ~ 150°C (TJ) Gate-Charge-Qg-Max-Vgs TO-236-3 SC-59 SOT-23-3
Vgs-Max 2N7002

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