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2N7002PS,115

MOSFET MOSFET N-CH DUAL 60V

Quantity Unit Price(USD) Ext. Price
6000 $0.037 $222.00
3000 $0.039 $117.00
500 $0.045 $22.50
150 $0.050 $7.50
50 $0.057 $2.85
5 $0.070 $0.35

Inventory:8,051

*The price is for reference only.
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Overview of 2N7002PS,115

The 2N7002PS,115 is an N-channel enhancement mode field-effect transistor (FET) designed for low-voltage, high-speed switching applications. It features a compact package and efficient performance, making it suitable for a variety of electronic circuits that require fast switching capabilities.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N7002PS,115 FET for a visual representation.

Key Features

  • Enhancement Mode N-Channel FET: The 2N7002PS,115 operates in the enhancement mode, allowing for easy and efficient switching.
  • Low Threshold Voltage: This FET has a low threshold voltage, enabling it to switch effectively in low-voltage applications.
  • High-Speed Switching: With its high-speed switching capabilities, the 2N7002PS,115 is suitable for applications requiring fast response times.
  • Compact Package: The compact package of this FET makes it space-efficient and ideal for designs with limited board space.

Note: For detailed technical specifications, please refer to the 2N7002PS,115 datasheet.

Application

  • Switching Circuits: Ideal for use in low-voltage switching circuits in various electronic devices.
  • Pulse Circuits: Suitable for pulse generation and high-speed switching applications.
  • Buffering Applications: Can be used as a buffer in electronic circuits to isolate components.

Functionality

The 2N7002PS,115 is a versatile N-channel FET that provides efficient switching capabilities in low-voltage applications, making it a reliable component for various electronic designs.

Usage Guide

  • Gate Voltage: Apply the appropriate voltage to the Gate (G) pin to control the FET switching operation.
  • Drain-Source Connection: Connect the load or circuit to be switched between the Drain (D) and Source (S) pins.
  • Threshold Voltage: Ensure that the applied voltage meets the threshold requirements for proper FET operation.

Frequently Asked Questions

Q: Can the 2N7002PS,115 be used in high-frequency applications?
A: Yes, the 2N7002PS,115 is capable of high-speed switching and can be used in high-frequency applications with appropriate circuit design.

Equivalent

For similar functionalities, consider these alternatives to the 2N7002PS,115:

  • BS170: A similar N-channel FET with comparable specifications suitable for low-voltage switching applications.
  • IRLML2502: This N-channel FET offers enhanced performance characteristics and is suitable for high-speed switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSSOP-6 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 320 mA Rds On - Drain-Source Resistance 1 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.1 V
Qg - Gate Charge 800 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 280 mW
Channel Mode Enhancement Brand Nexperia
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Part # Aliases 934064134115
Unit Weight 0.000265 oz

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2N7002PS,115

MOSFET MOSFET N-CH DUAL 60V

Inventory:

8,051