• 2N6505G TO220-3
2N6505G TO220-3

2N6505G

100V 16A 75mA 3-Pin TO-220AB

Inventory:9,775

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Overview of 2N6505G

The 2N6505G is a Darlington NPN transistor designed for high-voltage applications, capable of handling up to 40A of continuous current. It is commonly used in power amplification and voltage regulation circuits where high current amplification is required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Base (B): The control input for the transistor.
  • Collector (C): This lead carries the main current flow.
  • Emitter (E): The output terminal for the transistor.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N6505G transistor for a visual representation.

Key Features

  • Darlington Configuration: The 2N6505G features a Darlington configuration for high current gain and performance.
  • High Current Rating: Capable of handling up to 40A of continuous current, making it suitable for power applications.
  • High Voltage Capability: Designed for use in high-voltage circuits, accommodating voltage requirements in various applications.
  • Low Saturation Voltage: The transistor exhibits low saturation voltage, reducing power dissipation and improving efficiency.
  • Wide Operating Temperature Range: Operates efficiently across a wide temperature range, suitable for diverse environmental conditions.

Note: For detailed technical specifications, please refer to the 2N6505G datasheet.

Application

  • Power Amplification: Ideal for power amplifier circuits requiring high current amplification.
  • Voltage Regulation: Used in voltage regulator circuits to stabilize and control voltage levels.
  • Switching Applications: Suitable for high-powered switching applications where low saturation voltage is crucial.

Functionality

The 2N6505G transistor operates as a high-current amplifier, providing efficient power control and regulation in various electronic circuits.

Usage Guide

  • Base Connection: Connect the control signal to the Base (B) terminal to control the transistor's operation.
  • Emitter Connection: The Emitter (E) lead should be connected to the ground or common reference point.
  • Collector Connection: The load or circuit requiring amplification or voltage regulation should be connected to the Collector (C) terminal.

Frequently Asked Questions

Q: What is the maximum current rating of the 2N6505G transistor?
A: The 2N6505G can handle up to 40A of continuous current.

Q: Is the 2N6505G suitable for high-voltage applications?
A: Yes, the 2N6505G is designed for high-voltage circuits and provides reliable performance in such applications.

Equivalent

For similar functionalities, consider these alternatives to the 2N6505G:

  • TIP142: A complementary NPN Darlington transistor with similar high current and voltage capabilities.
  • MJ11016: This high-power NPN transistor offers comparable performance to the 2N6505G in power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Max Gate Trigger Current (IGTMAX) (mA) 30 On-State Current (Itrms) (A) 25
Non-Repetitive Surge Current (ITSM 60Hz) (A) 250 Gate Trigger Voltage MAX 1.5
Repetitive Peak Off-State Voltage (VDRM) (V) 100

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2N6505G

100V 16A 75mA 3-Pin TO-220AB

Inventory:

9,775