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2N6039G

Darlington Transistors 4A 80V NPN Bipolar Power

Inventory:7,902

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Overview of 2N6039G

The 2N6039G is a PNP high-power transistor designed for various high-voltage and high-speed switching applications. It is capable of handling high current and power levels, making it suitable for power amplification and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Current is sourced or sunk from this terminal.
  • Base (B): Controls the flow of current between the emitter and collector.
  • Collector (C): Current flows out of this terminal.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N6039G transistor for a visual representation.

Key Features

  • High Power Handling: Capable of handling high power and current levels for demanding applications.
  • PNP Transistor: Features a PNP configuration suitable for various circuit designs.
  • High-Voltage Applications: Designed for use in high-voltage circuits requiring efficient switching.
  • Fast Switching Speed: Offers fast switching characteristics for high-speed applications.
  • Robust Construction: Built to withstand high power dissipation and voltage stress.

Note: For detailed technical specifications, please refer to the 2N6039G datasheet.

Application

  • Power Amplification: Ideal for power amplification in audio or RF circuits.
  • Switching Circuits: Suitable for high-speed switching applications in various electronic systems.
  • Motor Control: Used in motor control circuits where high power handling is required.

Functionality

The 2N6039G transistor is a high-power PNP device used for power amplification and switching purposes.It offers reliable performance in high-voltage and high-current applications.

Usage Guide

  • Emitter Terminal (E): Connect to the ground or circuit common.
  • Base Terminal (B): Apply the control signal to this terminal for switching operations.
  • Collector Terminal (C): Connect to the load or power supply in the circuit.

Frequently Asked Questions

Q: Is the 2N6039G suitable for high-frequency applications?
A: While primarily designed for high-power applications, the 2N6039G can also be used in moderate frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the 2N6039G:

  • MJ11015: A high-power PNP transistor with comparable specifications to the 2N6039G.
  • TIP3055: This PNP transistor offers high power handling capabilities suitable for various applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type TO-225-3 Case Outline 77-09
MSL Type NA MSL Temp (°C) 0
Container Type BLKBX Container Qty. 500
ON Target N Polarity NPN
IC Continuous (A) 4 V(BR)CEO Min (V) 80
VCE(sat) Max (V) 2 hFE Min (k) 0.75
hFE Max (k) 15 fT Min (MHz) 25
Pricing ($/Unit) Price N/A

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2N6039G

Darlington Transistors 4A 80V NPN Bipolar Power

Inventory:

7,902