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2N5781

Trans GP BJT PNP 65V 3.5A 3-Pin TO-5

Quantity Unit Price(USD) Ext. Price
1 $40.933 $40.93
200 $16.333 $3,266.60
500 $15.787 $7,893.50
1000 $15.518 $15,518.00

Inventory:7,587

*The price is for reference only.
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Overview of 2N5781

The 2N5781 is a high-power NPN bipolar junction transistor (BJT) designed for power amplification applications. This transistor is capable of handling high currents and voltages, making it suitable for use in power supplies, audio amplifiers, and other high-power circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Current Drain Terminal
  • Base (B): Control Terminal
  • Collector (C): Current Source Terminal
  • Collector (Case): Heat Dissipation Terminal
  • Collector (Flange): Mounting Terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N5781 transistor for a visual representation.

Key Features

  • High Power Handling: The 2N5781 is capable of handling high currents and voltages, making it suitable for power applications.
  • Low Saturation Voltage: This transistor exhibits low saturation voltage, resulting in efficient power amplification.
  • Wide Frequency Range: With a wide frequency response, the 2N5781 is suitable for audio and RF amplification.
  • Temperature Stability: The transistor offers good temperature stability, ensuring reliable performance across varying operating conditions.
  • Robust Construction: The 2N5781 features a robust construction for enhanced durability in high-power environments.

Note: For detailed technical specifications, please refer to the 2N5781 datasheet.

Application

  • Power Amplification: Ideal for use in power amplifiers, motor control circuits, and high-power audio systems.
  • Power Supplies: Suitable for regulating and switching power supplies where high power handling is required.
  • RF Amplification: Can be used in RF signal amplification applications due to its wide frequency range.

Functionality

The 2N5781 NPN transistor is designed for high-power amplification, providing efficient signal amplification in various power applications.

Usage Guide

  • Connection: Connect the Emitter (E), Base (B), and Collector (C) terminals as per the circuit requirements.
  • Biasing: Provide the necessary biasing voltage and current to the Base terminal for proper transistor operation.
  • Heat Dissipation: Ensure proper heat sinking for the Collector (Case) terminal to dissipate heat generated during operation.

Frequently Asked Questions

Q: Is the 2N5781 suitable for audio amplifier applications?
A: Yes, the 2N5781 is well-suited for audio amplifier applications requiring high power output.

Equivalent

For similar functionalities, consider these alternatives to the 2N5781:

  • 2N3773: A high-power NPN transistor with comparable power handling capabilities.
  • MJ15003: This transistor offers similar power amplification features and high-voltage capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS N
Brand Microchip Technology Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si

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2N5781

Trans GP BJT PNP 65V 3.5A 3-Pin TO-5

Inventory:

7,587