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2N5685

NPN Bipolar Junction Transistor TO-3VAR

Quantity Unit Price(USD) Ext. Price
1 $1.339 $1.34
10 $1.134 $11.34
25 $0.999 $24.98
100 $0.872 $87.20
500 $0.816 $408.00
1000 $0.790 $790.00

Inventory:2,111

*The price is for reference only.
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Overview of 2N5685

The 2N5685 is a power transistor designed for high-power amplifier and switching applications. This NPN bipolar junction transistor can handle large currents and voltages, making it suitable for various power electronics projects.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N5685 for a visual representation.

Key Features

  • High Power Handling Capability: The 2N5685 can handle high currents and voltages, making it suitable for power amplifier and switching applications.
  • NPN Transistor: This transistor is of NPN type, allowing for operation with positive voltage at the collector concerning the emitter.
  • Robust Construction: Designed for reliable performance in demanding environments, ensuring longevity under heavy load conditions.
  • Wide Operating Temperature Range: The 2N5685 operates efficiently over a broad temperature range, making it versatile for various applications.

Note: For detailed technical specifications, please refer to the 2N5685 datasheet.

Application

  • Power Amplifiers: Ideal for use in high-power audio amplifiers, RF amplifiers, and other power electronics applications.
  • Switching Circuits: Suitable for switching applications where high current and voltage requirements are necessary.
  • Pulse Circuits: Used in pulse circuits for generating high-power pulses in different electronic systems.

Functionality

The 2N5685 is a high-power NPN transistor that can efficiently amplify or switch large signals in electronic circuits. Its robust design and high power handling capability make it a versatile component for power applications.

Usage Guide

  • Power Connections: Connect the collector (C), base (B), and emitter (E) pins to the corresponding elements in the circuit with proper biasing.
  • Heat Dissipation: Ensure adequate heatsinking for the 2N5685 to dissipate heat generated during operation.
  • Operating Conditions: Operate the transistor within the specified voltage and current ratings to prevent damage and ensure optimal performance.

Frequently Asked Questions

Q: Is the 2N5685 suitable for high-frequency applications?
A: The 2N5685 is more suited for high-power applications rather than high-frequency operations due to its characteristics.

Equivalent

For similar functionalities, consider these alternatives to the 2N5685:

  • 2N5684: A comparable power transistor with slightly different specifications or package options.
  • 2N5686: This transistor offers similar power handling capabilities with potential variations in performance characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS N
Brand Microchip Technology Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si

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