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2N5551TA

80@10mA,5V 600mA

Inventory:3,741

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Overview of 2N5551TA

The 2N5551TA is a general-purpose PNP bipolar junction transistor (BJT) commonly used in amplification and switching applications. This transistor is designed for low to medium power amplification and can also be utilized in various circuit configurations for signal processing and control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Current flows out through the emitter terminal.
  • Base (B): Controls the conduction of current between the emitter and collector.
  • Collector (C): Collects current from the emitter-base junction.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N5551TA transistor for a visual representation.

Key Features

  • General-Purpose PNP Transistor: The 2N5551TA is a versatile transistor suitable for a wide range of applications.
  • Low to Medium Power Amplification: Capable of amplifying low to moderate power signals accurately.
  • High Current Gain: Provides high current gain, making it efficient for amplification tasks.
  • PNP Configuration: The PNP configuration allows for complementary pairing with NPN transistors in circuit designs.
  • Robust Construction: Designed for reliable performance and durability under various operating conditions.

Note: For detailed technical specifications, please refer to the 2N5551TA datasheet.

Application

  • Amplification: Ideal for amplifying electronic signals in audio amplifiers, sensor circuits, and more.
  • Switching: Used for switching applications in electronic devices and control systems.
  • Signal Processing: Suitable for signal processing tasks such as filtering and conditioning signals.

Functionality

The 2N5551TA PNP transistor facilitates signal amplification and switching operations in electronic circuits. Its high current gain and versatile nature make it a valuable component in various applications.

Usage Guide

  • Emitter Connection: Connect the emitter terminal to the ground or common reference point in the circuit.
  • Base Biasing: Properly bias the base terminal to control the flow of current through the transistor.
  • Collector Load: Connect the collector terminal to the load or output of the circuit for signal processing.

Frequently Asked Questions

Q: Is the 2N5551TA suitable for high-frequency applications?
A: The 2N5551TA has limitations in high-frequency performance and is more suited for low to moderate frequency operations.

Equivalent

For alternative transistor options with similar characteristics, consider the following:

  • 2N3906: A PNP BJT with comparable general-purpose functionality and characteristics to the 2N5551TA.
  • BC556: Another PNP transistor suitable for low to medium power applications and amplification tasks.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type TO-92-3 LF Case Outline 135AR
MSL Type NA MSL Temp (°C) 0
Container Type FNFLD Container Qty. 2000
ON Target N Polarity NPN
Type General Purpose VCE(sat) Max (V) 0.2
IC Cont. (A) 0.6 VCEO Min (V) 160
VCBO (V) 180 VEBO (V) 6
VBE(sat) (V) 1 hFE Min 80
hFE Max 250 fT Min (MHz) 100
PTM Max (W) 0.35 Pricing ($/Unit) $0.0356Sample

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