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2N5192G

General Purpose Transistor for Amplification Applications

Quantity Unit Price(USD) Ext. Price
1000 $0.221 $221.00
500 $0.231 $115.50
100 $0.248 $24.80
30 $0.287 $8.61
10 $0.317 $3.17
1 $0.390 $0.39

Inventory:7,555

*The price is for reference only.
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Overview of 2N5192G

The 2N5192G is a high-power NPN bipolar junction transistor (BJT) designed for use in power amplifier and switching applications. This transistor is capable of handling high current and voltage levels, making it suitable for power control and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Connects to the ground or common reference point
  • Base (B): Controls the transistor's switching or amplification function
  • Collector (C): Handles the output current and voltage

Circuit Diagram

Include a circuit diagram illustrating the usage of the 2N5192G transistor in power amplifier or switching circuits.

Key Features

  • High Power Handling: The 2N5192G can handle high power levels, making it suitable for power applications.
  • High Current and Voltage Ratings: Capable of handling significant current and voltage levels for power control.
  • NPN Configuration: NPN polarity enables easy integration in various circuit configurations.
  • Robust Construction: Built to withstand high power and temperature conditions for reliable performance.

Note: For detailed technical specifications, please refer to the 2N5192G datasheet.

Application

  • Power Amplification: Ideal for use in power amplifier circuits for audio or high-power applications.
  • Switching Circuits: Suitable for switching applications where high current handling is required.
  • Motor Control: Can be utilized in motor control circuits for driving motors with high power requirements.

Functionality

The 2N5192G transistor is designed to amplify or switch electrical signals with high power requirements. It provides a reliable and efficient solution for power control applications.

Usage Guide

  • Connection: Connect the emitter, base, and collector pins to their respective circuit elements as per the circuit design.
  • Voltage and Current: Ensure that the voltage and current levels within the specifications of the transistor for safe operation.

Frequently Asked Questions

Q: Is the 2N5192G suitable for high-frequency applications?
A: The 2N5192G is optimized for power applications and may not be ideal for high-frequency operation due to its power handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the 2N5192G:

  • 2N5191G: A comparable high-power NPN transistor with slightly different electrical characteristics.
  • MJL21193G: This power transistor offers similar power handling capabilities with a different package style.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Active
Transistor Type NPN Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A
Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1.5A, 2V
Power - Max 40 W Frequency - Transition 2MHz
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-126
Base Product Number 2N5192

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2N5192G

General Purpose Transistor for Amplification Applications

Inventory:

7,555