TFSOP-56
(107)
The TSOP-I (Thin Small Outline Package I) offers a compact, high-reliability packaging solution for integrated circuits in advanced electronic systems. Designed for thermal efficiency and minimal footprint, this configuration is ideal for space-constrained applications across various industries such as telecommunications, automotive, and consumer electronics.
Part Number | Description | Manufacturers | Inventory | Add To Bom |
---|---|---|---|---|
MT29F2G08ABAEAWP:E | MT29F2G08ABAEAWP Memory IC 25ns | Micron | 7,756 | |
MT29F2G08ABAEAWP-IT:E | TSOP 48/C°/ 256MX8 NAND FLASH PLASTIC EXT TEMP PBF | Micron Technology | 8,206 | |
MT29F4G16ABADAWP-IT:D | 4G-bit capacity with 256M x 16 configuration | Micron Technology | 8,020 | |
MX29GL256FDT2I-11G | Parallel 256MBIT Flash Memory IC in 56TSOP Package | Macronix International | 7,738 | |
K9F1G08U0C-PCB0 | TSOP-I 48-Pin Package | Samsung Electronics | 8,238 | |
AT45DB161B-TC | High-speed data transfer | Microchip Technology | 8,082 | |
AT29BV010A-15TU | AT29BV010A-15TU is a NOR Flash device providing 1M of memory with 128Kx8 configuration and designed for industrial temperature ranges | Microchip Technology | 5,862 | |
MX30LF4G28AD-TI | Compact 48-pin TSOP-I package for easy integration | Macronix | 6,521 | |
MT29F1G08ABADAWP-IT:D | 3.3V Supply Voltage | Micron Technology | 5,506 | |
MT29F8G08ABABAWP:B | High-density storage solution for embedded systems | Micron Technology | 8,595 | |
MX29F400CBTI-70G | Non-volatile memory | Macronix International | 7,790 | |
MX29GL128FLT2I-90G | TSOP-I package with 56 pins | Macronix International | 9,624 | |
MX29GL320EBTI-70G | Operating Voltage Range: 2.7V to 3.6V | Macronix International | 6,603 | |
MX29GL512FLT2I-10Q | NOR Flash memory module with 512Mbits capacity and 100ns speed in a 56-pin TSOP-I package | Macronix International | 9,953 | |
MX29LV160DBTI-70G | Flash memory chip with 1 megabit by 16 organization and 70 nanosecond access speed in a PDSO48 package | Macronix International | 6,141 | |
MX29LV640EBTI-70G | High-speed 70ns Access Time | Macronix | 9,990 | |
RMLV1616AGSA-5S2#AA0 | 16MB SRAM Memory Chip | Renesas | 9,746 | |
W29N01GVSIAA | Manufacturer: Winbond Electronics Corporation | Winbond | 7,866 | |
MT29F2G08ABAEAWP-IT | 3.3V parallel interface | Micron Technology | 9,224 | |
TC58TEG5DCJTA00 | Compact flash IC boasting 4 gigabits of storage with a byte-wide organization, enclosed in a PDSO48 package | KIOXIA | 8,897 | |
MT29F16G08FAAWC:A | Parallel interface for quick data transfer | Micron Technology | 8,973 | |
CY62128EV30LL-45ZXI | 32-Pin TSOP-I Tray | Cypress Semiconductor Corp | 6,257 | |
CY62138FV30LL-45ZXI | Efficient 256K x 8 LP SRAM device | Infineon Technologies | 5,548 | |
CY62177EV30LL-55ZXI | Operating voltage range from 2.2 to 3.7 V | Infineon Technologies | 6,271 | |
CY7C1061G30-10ZXE | CY7C1061G30-10ZXE is an automotive-grade SRAM chip with a capacity of 16M-bit and operates at speeds as fast as 10ns | Infineon Technologies | 7,276 | |
CY7C109D-10ZXI | The CY7C109D-10ZXI is a reliable and efficient SRAM module that boasts 128 kilobits of storage organized in an 8-bit configuration | Infineon Technologies | 8,141 | |
FM28V100-TGTR | Low-power consumption and high reliability | Infineon Technologies | 7,804 | |
CY62167EV30LL-45ZXA | SRAM Chip Async Single 3V 16M-bit 2M/1M x 8/16-bit 45ns Automotive 48-Pin TSOP-I Tray | Infineon Technologies | 9,183 | |
FM28V020-TG | FRAM memory module with 32Kx8 capacity in parallel configuration, packaged in a PDSO32 format | Infineon Technologies | 8,038 | |
MT29F2G08AACWP:C | Designed for fast data transfer with a speed of 18ns | Micron Technology | 9,327 | |
IS61WV102416BLL-10TI | SRAM Chip Async Single | Integrated Silicon Solution Inc | 8,015 | |
MD2811-D32-V3 | Flash Memory Drive, CMOS, PDSO48, 20 X 12 MM, 1.30 MM HEIGHT, TSOP1-48 | Western Digital | 9,152 | |
MT29F2G08ABAFAWP:F | Micron Technology | 5,672 | ||
K9F5608U0D-PCB0000 | SLC NAND Flash Parallel 3.3V 256M-bit 32M x 8 15us 48-Pin TSOP-I Tray | Samsung Electronics | 3,622 | |
K9F4G08U0F-5IB0 | SLC NAND Flash Parallel Automotive AEC-Q100 | Samsung Electronics | 4,761 | |
K9K8G08U0A-PIB0000 | SLC NAND Flash Parallel 3.3V 8G-bit 1G x 8 25us 48-Pin TSOP-I Tray | Samsung Electronics | 2,570 | |
K9WAG08U1D-SCB0000 | SLC NAND Flash with x architecture and ns access tim | Samsung Electronics | 4,874 | |
SST39LF802C-55-4C-EKE | Reliable and fast parallel flash memory module | Microchip Technology | 9,319 | |
AT45DB041B-TC | Flash Serial-SPI 3.3V 4M-bit 20ns 28-Pin TSOP-I | Microchip Technology | 5,622 | |
AT28LV010-20TU-235 | Parallel interface enables fast data transfer and processin | Microchip Technology | 9,974 | |
SST39VF402C-70-4C-EKE-T | A robust and flexible bit NOR Flash ideal for embedded systems and IoT devices | Microchip Technology | 9,112 | |
SST39VF401C-70-4C-EKE | Compact and reliable, this b parallel flash memory is perfect for your embedded systems need | Microchip Technology | 9,892 | |
SST39VF401C-70-4I-EKE | NOR Flash 2.7 to 3.6V 4Mbit Multi-Purpose Flash | Microchip Technology | 7,733 | |
SST39LF402C-55-4C-EKE-T | NOR Flash Parallel 3.3V 4M-bit 256K x 16 55ns 48-Pin TSOP-I T/R | Microchip Technology | 7,123 | |
SST39LF401C-55-4C-EKE-T | High-capacity flash memory for parallel interface application | Microchip Technology | 7,839 | |
MT29F2G08ABAEAWP | Parallel interface flash memory for fast data transfe | Micron | 4,939 | |
CY14B116L-Z45XI | NVRAM NVSRAM Parallel 16Mbit 5V 48-Pin TSOP-I Tray | Infineon Technologies | 6,678 | |
CY14B116N-Z45XI | NVRAM NVSRAM Parallel 16Mbit 5V 48-Pin TSOP-I Tray | Infineon Technologies | 7,816 | |
CY14B116N-Z30XI | NVRAM NVSRAM Parallel 16Mbit 5V 48-Pin TSOP-I Tray | Infineon Technologies | 5,869 | |
CY14B116N-Z45XIT | Five-volt, high-capacity NVSRAM ideal for automotive, aerospace, and medical industries | Infineon Technologies | 6,793 |