TSOP-54
(299)The TSOP-54 (Thin Small Outline Package) offers a compact, high-reliability packaging solution for integrated circuits in advanced electronic systems. Designed for thermal efficiency and minimal footprint, this 54-lead configuration is ideal for space-constrained applications across telecommunications, automotive, and consumer electronics sectors.
Part Number | Description | Manufacturers | Inventory | Add To Bom |
---|---|---|---|---|
MT48LC32M16A2TG-75IT:C | 32Mx16 3.3V 54-Pin TSOP-II Tray | Micron Technology | 6,237 | |
CY7C1061AV33-10ZI | PDSO54, TSOP2-54 | Infineon Technologies | 6,881 | |
IS42S16320B-7TLI | DRAM Chip SDRAM 512M-Bit | Issi, Integrated Silicon Solution Inc | 6,867 | |
MT48LC16M16A2P-75:D | 256Mbit memory capacity | Micron Technology | 8,516 | |
MT48LC16M16A2P-7E:G | English expressions in | Micron Technology | 7,671 | |
MT48LC4M16A2P-75:G | The MT48LC4M16A2P-75:G DRAM chip is a reliable and efficient memory solution for applications that demand stable performance | Micron Technology | 9,209 | |
MT48LC8M16A2P-75:G | DRAM Chip SDR SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II | Micron Technology | 7,698 | |
CY7C1069DV33-10ZSXI | In stock, ready to ship today | Infineon | 8,894 | |
IS42S16800E-7TL | 3.3V Memory Module | Issi, Integrated Silicon Solution Inc | 6,379 | |
W9812G6KH-6 | DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II | Winbond Electronics | 7,440 | |
W9825G6KH-6I | IC SDRAM 256MBIT 166MHZ 54TSOP | Winbond Electronics | 5,138 | |
EM638165TS-6G | This product is a Synchronous DRAM module with a capacity of 4 megabytes and a speed of 5 | Etron Technology, Inc. | 7,809 | |
MT48LC16M16A2P-75IT:D | High-performance memory module with PDSO54 packaging | Micron Technology | 5,768 | |
MR4A16BUYS45 | High-Performance Automotive MRAM Memory Module, 16 Mb Capacity | Everspin Technologies | 5,458 | |
AS4C16M16SA-6TCN | 256M – (16Mx16bit) Synchronous DRAM (SDRAM) | Alliance Memory, Inc. | 6,065 | |
IS42S16320F-6TLI | 32Mx16 166MHz memory module | ISSI, Integrated Silicon Solution Inc | 6,218 | |
MR4A16BCYS35R | 16Mbit TSOP2-54 RAM for fast and efficient data access" | Everspin Technologies Inc. | 8,351 | |
MT48LC32M16A2P-75IT:C | High-speed, low-power memory solution for data-intensive systems." (66 characters) | Micron Technology | 7,650 | |
MT48LC32M8A2P-75:D | 256Mbit DRAM Chip with SDR SDRAM technology | Micron Technology Inc. | 5,747 | |
W9825G6KH-6 | The W9825G6KH is a 256M SDRAM and speed involving -5/-5I/-6/-6I/-6J/-6L/-6A/-6K/-75/75J/75L | Winbond Electronics | 8,007 | |
CY7C1061GN30-10ZSXI | Low voltage operation | Infineon Technologies | 6,225 | |
AS4C8M16SA-7TCN | 3.3V 54-Pin TSOP-II Tray | Alliance | 8,353 | |
MT48LC16M16A2P-6A IT:G | Boost your device's memory with this SDRAM chip's impressive 256M-bit capacity | Micron | 7,528 | |
W9864G6KH-6 | Offers reliable and efficient memory storage for electronic devices | Winbond Electronics | 5,963 | |
AS4C16M16SA-6TIN | Suitable for various electronic devices | Alliance | 8,712 | |
AS4C16M16SA-7TCN | Product Description | Alliance Memory | 6,269 | |
AS4C16M16S-7TCN | A synchronous DRAM chip with a capacity of 16 megabytes, structured as 16 rows of 16 memory cells each, featuring a fast access time of 5 | Alliance | 9,045 | |
AS4C32M16SB-6TIN | Operating at 166 MHz | Alliance | 6,315 | |
AS4C32M16SB-7TCN | DRAM 512M 3.3V 143MHz 32M x 16 SDRAM | Alliance | 5,064 | |
AS4C32M16SA-7TIN | High-speed synchronous memory chip with 32 million x 16 data storage, operating at 5 | Alliance | 6,067 | |
AS4C32M16SM-7TCN | CMOS Synchronous Memory Module with 32Mx16 configuration | Alliance | 7,011 | |
AS4C8M16S-7TCN | DRAM 128Mb, 3.3V, 143Mhz 8M x 16 SDRAM | Alliance Memory | 8,347 | |
AS4C8M16SA-6TIN | AS4C8M16SA-6TIN | Alliance | 9,101 | |
CY7C1061AV33-10ZXC | A high-density, 16Mb fast asynchronous SRAM module providing high-speed data retrieval with a 1Mx16 organization." | Infineon Technologies | 9,785 | |
CY7C1061AV33-10ZXI | Cypress Semiconductor CY7C1061AV33-10ZXI SRAM Memory | Infineon | 6,730 | |
CY7C1061DV33-10ZSXI | Ready to ship today | Infineon Technologies | 5,238 | |
IS42S16160J-6TL | Synchronous memory chip | Issi, Integrated Silicon Solution Inc | 8,376 | |
IS42S16160J-7TLI | Complementary Metal Oxide Semiconductor | Lumissil | 6,688 | |
IS42S16320B-7TL | Memory Integrated Circuit Synchronous Dynamic Random Access Memory 512 Megabit 143 Megahertz 54 Terminal Small Outline Package | Issi | 8,846 | |
IS42S16320D-7TL | Memory chip with 32Mx16 configuration | Issi, Integrated Silicon Solution Inc | 7,950 | |
IS42S16400J-6TLI | Housed in a 54-pin Thin Small Outline Package (TSOP-II), this DRAM chip is compact and easy to integrate into circuit boards | Issi | 8,460 | |
IS42S16400J-7TL | The IS42S16400J-7TL is a Synchronous DRAM containing 4 megabytes organized in a 16-bit structure, boasting a rapid 5 | Issi, Integrated Silicon Solution Inc | 8,327 | |
IS42S16800E-7TLI | Synchronous DRAM | Issi | 8,270 | |
MR4A16BCYS35 | 16Mb MRAM memory IC with 16-bit parallel data interface, 1Mx16 organization, 35ns speed, SMD package | Everspin Technologies | 5,409 | |
MT48LC16M16A2P-6A IT:G TR | MT48LC16M16A2P-6A IT:G TR | Micron Technology | 8,239 | |
MT48LC16M16A2P-6A:D | MT48LC16M16A2P-6A:D | Micron Technology | 5,879 | |
MT48LC16M16A2P-6A:G | DRAM Chip SDRAM | Micron Technology | 5,487 | |
MT48LC16M16A2P-6A:G TR | Memory module with dynamic random-access memory synchronous dynamic random-access memory | Micron Technology | 8,535 | |
MT48LC16M16A2P-75:D TR | Reliable data storage for modern electronics desig | Micron Technology | 9,129 | |
MT48LC16M16A2P-7E:D | Thin Small Outline Package | Micron Technology | 7,506 |