TO264-3
(69)
The TO-264-3 (Transistor Outline 264-3) offers a reliable and efficient packaging solution for power transistors in various electronic applications. With its 3-lead configuration, this package is designed for optimal thermal performance and space-saving benefits, making it ideal for high-power applications in industries such as automotive, industrial, and power supply.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| APT34N80LC3G | Product APT34N80LC3G is a high-voltage MOSFET with a rating of 800 volts | Microchip Technology | 8,980 | |
| APT64GA90LD30 | APT64GA90LD30 - 900V Punch-Thru Insulated Gate Bipolar Transistor | Microchip Technology | 6,423 | |
| FGL40N120ANDTU | 64A Continuous Current | onsemi | 8,451 | |
| IXTK120P20T | Ideal for high-power applications requiring efficient switching capabilities | Ixys Integrated Circuits Division | 5,124 | |
| IXXK200N65B4 | Trans IGBT Chip N-CH 650V 370A 1150W 3-Pin(3+Tab) TO-264 | Ixys Integrated Circuits Division | 8,031 | |
| NTY100N10 | TO-3BPL N-CHANNEL POWER MOSFET, 100V, 0.01ohm | Onsemi | 7,903 | |
| APT50GN120L2DQ2G | Power Semiconductor Device for High Power Applications | Microchip Technology | 7,580 | |
| IXFK140N30P | 140 Amps MOSFET capable of handling 300 Volts with a low Rds(on) of 0.024 Ohms | Ixys Integrated Circuits Division | 4,119 | |
| IXFK160N30T | Suitable for high current applications up to 160A and 300V voltage requirements | Ixys Integrated Circuits Division | 8,874 | |
| IXFK230N20T | MOSFETs TO-264AA ROHS | Littelfuse | 5,819 | |
| IXFK300N20X3 | Transistor MOSFET, N-channel, 200V, 300A, 3-pin TO-264 package | Ixys Integrated Circuits Division | 9,492 | |
| IXFK420N10T | N-channel MOSFET transistor, 100V, 420A, TO-264 package | Ixys Integrated Circuits Division | 8,033 | |
| IXFK44N80P | N-channel power MOSFET with 800V voltage rating and 44A current rating | Ixys Integrated Circuits Division | 7,903 | |
| IXFK55N50 | IXFK55N50 is a power FET capable of handling currents up to 55A and voltages of 500V, with a low on-resistance of 0 | Ixys Integrated Circuits Division | 6,255 | |
| IXGK120N120A3 | N-channel insulated gate bipolar transistor with high voltage capability | Ixys Integrated Circuits Division | 7,639 | |
| IXGK120N60B | With its high voltage and current ratings, this trans IGBT chip offers reliable and efficient operation | Ixys Integrated Circuits Division | 7,757 | |
| IXTK210P10T | Trench power MOSFETs for efficient performance | Littelfuse | 3,785 | |
| IXTK140N20P | TO-264 MOSFETs compliant with RoHS | Ixys Integrated Circuits Division | 6,170 | |
| IXTK170P10P | -170A -100V 890W Transistor TO264 | Ixys Integrated Circuits Division | 9,305 | |
| IXTK22N100L | channel 1000V MOSFET with a current rating of 22A | Ixys Integrated Circuits Division | 6,981 | |
| IXTK32P60P | Field-Effect Transistor for power applications | Ixys Integrated Circuits Division | 8,841 | |
| IXTK40P50P | P-MOSFET transistor with PolarP™ technology | Ixys Integrated Circuits Division | 6,382 | |
| IXTK60N50L2 | MOSFET with a 60 Amps and 500V rating | Ixys Integrated Circuits Division | 9,607 | |
| IXTK90P20P | This MOSFET, designated as IXTK90P20P, offers a maximum current capacity of 90 | Ixys Integrated Circuits Division | 7,202 | |
| IXXK110N65B4H1 | TO-264 IGBT capable of handling 650 Volts at 250 Amps | Ixys Integrated Circuits Division | 6,117 | |
| IXXK300N60B3 | IXXK300N60B3 - XPT 600V IGBT 300A Transistors: These transistors feature a voltage rating of 600V and a current rating of 300A | Ixys Integrated Circuits Division | 9,759 | |
| MJL4281AG | Designed as part of the MJL Series | Onsemi | 8,572 | |
| MJL21195G | Product MJL21195G from ON Semiconductor is a PNP bipolar junction transistor | onsemi | 7,270 | |
| APT5010LVRG | Product APT5010LVRG, a MOSFET with a voltage rating of 500V and a resistance of 10 Ohms, presented in TO-264 package, meets RoHS compliance | Microchip Technology | 9,647 | |
| IXFK120N20 | Inquire for specifics | Ixys Integrated Circuits Division | 5,197 | |
| IXFK90N20 | This MOSFET, designated as IXFK90N20, has a maximum voltage rating of 200V and a current rating of 90A | Ixys Integrated Circuits Division | 9,869 | |
| IXGK60N60C2D1 | High-frequency IGBT with fast diode 60A 600V in TO264 package | Ixys Integrated Circuits Division | 9,092 | |
| MJL21193G | ON SEMICONDUCTOR MJL21193G | Onsemi | 7,912 | |
| RM50HG-12S | 1 Phase Silicon Rectifier Diode with 1 Element, 50A and 600V V(RRM) | Powerex Inc. | 8,981 | |
| RM25HG-24S | Rectifier Diode with 25A, 1200V V(RRM), Silicon Material, 1 Phase, 1 Element | Powerex Inc. | 6,013 | |
| MTY30N50E | The MTY30N50E is a MOSFETs component that meets ROHS standards | Onsemi | 8,872 | |
| MTY25N60E | MOSFETs MTY25N60E ROHS | Onsemi | 8,786 | |
| APT100S20LCTG | The APT100S20LCTG is a high voltage Schottky diode with a 200V rating | Microchip Technology | 3,896 | |
| APT50M65LLLG | High Power Switching Transistor for Various Applications | Microchip Technology | 3,420 | |
| APT60M75L2LLG | 600V MOSFET with TO-264 MAX package, RoHS compliant | Microchip Technology | 7,543 | |
| DSEC120-12AK | Rectifier Diode Switching 1.2KV 60A 80ns 3-Pin(3+Tab) TO-264AA | Ixys Integrated Circuits Division | 6,133 | |
| IXFK26N100P | TO-264AA MOSFETs compliant with ROHS | Ixys Integrated Circuits Division | 4,156 | |
| IXFK320N17T2 | The IXFK320N17T2 MOSFET: Rated for a maximum voltage of 170V and capable of handling currents up to 320A, housed in a TO-264 package | Ixys Integrated Circuits Division | 6,066 | |
| IXFK78N50P3 | TO-264AA package containing a high-power N-Channel MOSFET with a 500V voltage rating and 78A current rating | Ixys Integrated Circuits Division | 7,195 | |
| IXFL60N80P | 42 Amps, 800V, 0.15 Rds MOSFET | Ixys Integrated Circuits Division | 3,809 | |
| IXGK50N120C3H1 | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | Ixys Integrated Circuits Division | 2,730 | |
| IXGK55N120A3H1 | IGBT Modules Low-Frequency Range Low Vcesat w/ Diode | Ixys Integrated Circuits Division | 3,387 | |
| IXTK170N10P | 100V MOSFET capable of handling 170 Amps with low 0.009 Ohm Rds | Ixys Integrated Circuits Division | 2,774 | |
| IXTK90N25L2 | Channel 250V 33mOhm 960W Power MOSFET TO-264 - IXTK90N25L2 | Ixys Integrated Circuits Division | 6,203 | |
| 2SA1943RTU | Transistor General Purpose Bipolar Junction PNP 250V 17A 150000mW 3-Pin(3+Tab) TO-264 Tube | onsemi | 5,479 |