TO-264-3
(109)
The TO-264-3 (Transistor Outline 264-3) offers a robust, high-power packaging solution for integrated circuits in advanced electronic systems. Designed for efficient heat dissipation and durability, this 3-lead configuration is ideal for demanding applications in power electronics, automotive, and industrial sectors.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| IXTK120N25P | 120 Amp N-Channel Transistor with 250V Voltage Rating and TO-264AA Housing | Ixys | 7,638 | |
| IXFK94N50P2 | Trans MOSFET N-CH 500V 94A 3-Pin(3+Tab) TO-264 | IXYS | 6,262 | |
| APT94N60L2C3G | High voltage 600V 94A TO-264 MOSFET | Microchip Technology | 7,399 | |
| APT28M120L | Product APT28M120L is a MOSFET with a voltage rating of 1.2kV and a current rating of 29A | Microchip Technology | 8,669 | |
| APT44F80L | N-Channel Power MOSFET 800V 47A | Microchip Technology | 8,736 | |
| IXFK48N60P | Low Gate Charge of 150nC for Efficient Performance | Littelfuse | 9,154 | |
| 2SC5200OTU | 2SC5200OTU: NPN Bipolar Junction Transistor Tailored for High-Voltage Applications | onsemi | 6,138 | |
| IXFK27N80Q | High power handling capability of 500W at 4.5V | IXYS | 7,684 | |
| 2STA2121 | Transistor Bipolar PNP 250V 17A TO264 | STMicroelectronics | 9,975 | |
| APT37M100L | 3-pin (3+Tab) TO-264 package | Microchip Technology | 5,873 | |
| APT56M50L | The APT56M50L is a MOSFET designed for high-power applications, boasting a voltage tolerance of 500V and a current handling capacity of 56A | Microchip | 7,073 | |
| APT75GN60LDQ3G | Trans IGBT Chip N-CH 600V 155A 536W 3-Pin(3+Tab) TO-264 Tube | Microchip Technology | 7,373 | |
| APT80GA60LD40 | Trans IGBT Chip N-CH 600V 143A 625W 3-Pin(3+Tab) TO-264 Tube | Microchip Technology | 5,173 | |
| FJL6920YDTU | Bipolar NPN Transistor: Through Hole Mount, TO-264-3 Package, with 800V Voltage, 20A Current, and 200W Power Handling | onsemi | 5,850 | |
| FGL60N100BNTDTU | Insulated Gate Bipolar Transistor | onsemi | 6,543 | |
| IXBK55N300 | Single IGBT Discrete Diode, 55A, 3000V, BIMOSFET TO264 | IXYS | 7,323 | |
| IXFK100N65X2 | N-channel power MOSFET with a 650V maximum voltage and 100A maximum current rating in a TO-264 package | IXYS | 7,518 | |
| IXFK170N10 | 100V, 0.01ohm, 1-Element Specifications | Littelfuse | 7,182 | |
| IXFK180N10 | Effect Transistor | IXYS | 7,807 | |
| IXFK26N90 | MOSFET product IXFK26N90 offering 26 Amps, 900V, and 0.3 Rds | IXYS | 8,896 | |
| IXFK27N80 | Exclusive to OEMs and CMs (No brokers accepted) | IXYS | 6,651 | |
| IXFK44N50 | TO-264 Package with 3 Pins | IXYS | 8,794 | |
| IXFK48N50Q | Power field-effect transistor | IXYS | 7,088 | |
| IXFK66N50Q2 | 500V rated N-channel transistor with a TO-264AA package, designed for a continuous current of 66A | IXYS | 9,549 | |
| IXFK90N30 | Power transistor with a high drain current capacity of 90A and a voltage tolerance of 300V | IXYS | 6,770 | |
| IXGK60N60B2D1 | IXGK60N60B2D1: Insulated Gate Bipolar Transistor with 75A IC and 600V VCES, N-Channel, TO-264AA Package, 3-Pin Configuration | IXYS | 6,705 | |
| IXTK200N10P | Standard power MOSFET in TO-264 package with 100 V voltage rating and 200 A current rating | IXYS | 5,400 | |
| IXTK250N10 | MOSFET with 0.005 ohm Rds, 100V and 250 Amps | IXYS | 8,721 | |
| IXTK80N25 | 1-Element transistor configuration | IXYS | 5,247 | |
| MJL21196G | Transistor MJL21196G: NPN Type, 250 Volts, 16 Amperes | onsemi | 9,822 | |
| MTY100N10E | MOSFET Transistor with N-Channel Configuration in TO-264AA Package | onsemi | 9,800 | |
| SGL160N60UFDTU | Trans IGBT Chip N-CH 600V 160A 250W 3-Pin(3+Tab) TO-264 Tube | onsemi | 7,576 | |
| SGL50N60RUFDTU | Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-264 Tube | onsemi | 9,504 | |
| APT75GN120LG | APT75GN120LG IGBT Transistors employ Fieldstop design for enhanced performance at low frequencies | Microchip Technology | 8,010 | |
| IXYB82N120C3H1 | TO-264-3 (TO-264AA) packaging | IXYS Corporation | 7,283 | |
| 2SA1943OTU | Bipolar Junction Transistor (BJT) PNP 250V 17A | Onsemi | 6,897 | |
| APT100GN60LDQ4G | 600V 229A N-Channel IGBT Chip for Transistor TO-264 | Microchip | 5,038 | |
| APT8020LLLG | 800V MOSFET with 20 Ohm Resistance TO-264 Package | Microchip | 8,174 | |
| FJL6920TU | The FJL6920TU belongs to the FJL6920 Series | Onsemi | 7,012 | |
| IXFK240N25X3 | N-channel power MOSFET rated at 250 volts and 240 amps with a TO-264 package | Littelfuse | 8,867 | |
| IXFK24N100 | Power Field-Effect Transistor | Littelfuse | 8,396 | |
| IXFK34N80 | N-channel MOSFET Discrete with 34A current handling capability and 800V voltage rating, TO264 package | Littelfuse | 6,145 | |
| IXFK36N60 | TO-264 Power FET 36A 600V | Littelfuse | 8,898 | |
| IXFK44N50P | With a gate-source threshold voltage of 5V at 4mA | Littelfuse | 5,982 | |
| IXFK48N50 | N-Channel Silicon Metal-oxide Semiconductor FET with 0.1ohm | Littelfuse | 6,018 | |
| IXTK5N250 | Not applicable, ships within 1 day | Littelfuse | 6,397 | |
| IXYK120N120C3 | IXYK120N120C3: N-Channel IGBT Transistor Chip, 1200 Volts, 220 Amperes, 1500 Watts, TO-264 Housing | Ixys | 5,791 | |
| MJL1302AG | Described as a Trans GP BJT, the MJL1302AG is a PNP transistor suitable for general purpose use | Onsemi | 5,916 | |
| MJL3281AG | Power Bipolar Transistor with 15A Collector Current and 260V Collector-Emitter Breakdown Voltage, NPN Type | Onsemi | 8,938 | |
| IXFB40N110P | N-Channel Silicon Metal-oxide Semiconductor FET | IXYS | 9,404 |