TO-263-3
(596)
The TO-263-3 (Transistor Outline 263-3) offers a robust, high-reliability packaging solution for power semiconductors in advanced electronic systems. Designed for efficient heat dissipation and ease of mounting, this 3-lead configuration is ideal for a wide range of power electronic applications in industries such as automotive, industrial, and telecommunications.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| IPB072N15N3G | 7.2mΩ at 10V, 100A and 4V at 270uA | Infineon Technologies | 8,926 | |
| SPB11N60C3 | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R | INFINEON | 7,146 | |
| IXTA10P50P | Ready to Ship within 1 Day | IXYS | 7,619 | |
| STB100N10F7 | The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design | STMicroelectronics | 7,535 | |
| IRF2807ZS | N-Channel Power Field-Effect Transistor with 75A I(D) | Infineon Technologies | 9,546 | |
| IPB027N10N5 | Robust and durable component for demanding industrial power systems | INFINEON | 4,912 | |
| 12TQ045SPBF | 45V 15A Schottky Rectifier Diode Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube | Vishay | 9,878 | |
| 20L15TS | 20A Schottky Diode 15V | Vishay General Semiconductor - Diodes Division | 9,723 | |
| 2SK4065-DL-1E | Trans MOSFET N-CH Si 75V 100A 3-Pin(2+Tab) D2PAK T/R | onsemi | 9,193 | |
| 8TQ100S | Schottky Diodes & Rectifiers Recommended Alternative | SMC Diode Solutions | 8,614 | |
| AOB14N50 | AOB14N50 is a power transistor | Alpha and Omega Semiconductor | 5,494 | |
| AOB260L | TO263-packaged N-MOSFET transistor featuring unipolar operation | Alpha and Omega Semiconductor | 7,143 | |
| AOB27S60L | 27A 600V N-channel MOSFET in TO263 package | Alpha and Omega Semiconductor | 6,744 | |
| AUIRF6215STRL | This MOSFET is compliant with ROHS regulations, ensuring environmental friendliness | Infineon Technologies | 6,583 | |
| AUIRFS8405 | The AUIRFS8405 transistor is housed in a D2PAK package with three pins (2+Tab), providing robustness for automotive systems | International Rectifier | 8,140 | |
| DPG60IM300PC | Rectifier Diode Switching 300V 60A 35ns 3-Pin(2+Tab) D2PAK T/R | IXYS | 5,511 | |
| E4D20120G | TO-263AB Schottky Rectifier Diode - Silicon Carbide, 1 Phase, 1 Element, 56A, 1200V V(RRM), 2 PIN | WOLFSPEED, INC | 9,646 | |
| FDB035AN06A0 | Trans MOSFET N-CH 60V 22A 3-Pin(2+Tab) D2PAK T/R | onsemi | 7,373 | |
| FDB075N15A_F085 | N-Channel Power Trench® MOSFET 150V, 110A, 5.5mΩ | onsemi | 7,461 | |
| FDB3652 | Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) D2PAK T/R | onsemi | 5,265 | |
| FDB6676 | 30V N-channel MOSFET with a maximum current rating of 84A | Fairchild Semiconductor | 9,628 | |
| FDB7030L | Product FDB7030L is a 30V 80A N Channel D2PAK MOSFET with a low on-state resistance of 7mΩ at 40A and a power dissipation of 68W | Fairchild Semiconductor | 8,337 | |
| FDB7045L | Product FDB7045L - Overview of N-Channel MOSFET Transistor, TO-263AB: | Fairchild Semiconductor | 5,272 | |
| FDB8874 | D2PAK package with 3 pins (2+Tab) | onsemi | 6,969 | |
| FFB20UP20STM | Rectifier Diode Switching 200V 20A 45ns 3-Pin(2+Tab) D2PAK T/R | onsemi | 8,606 | |
| FGB20N60SFD-F085 | Trans IGBT Chip N-CH 600V 40A 208W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R | onsemi | 7,632 | |
| FJB102TM | NPN Darlington transistors with 100V power rating | onsemi | 9,816 | |
| FQB12P20TM | It features a gate threshold voltage of 10V and a leakage current of 5V at 250uA | onsemi | 5,016 | |
| FQB33N10TM | Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R | onsemi | 9,905 | |
| FQB4N80TM | Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R | onsemi | 6,945 | |
| HGT1S7N60A4DS | Switched mode power supply series for motor applications | onsemi | 8,270 | |
| IPB020N10N5LFATMA1 | Low RDS(on) and wide safe operating area in PG-TO263-3 package, RoHS compliant | Infineon Technologies | 8,930 | |
| IPB020NE7N3 G | OptiMOS 3 power MOSFET with 75V rating | Infineon | 7,845 | |
| IPB027N10N3G | High-performance OptiMOS 3 N-channel MOSFET rated for 100 volts and a maximum current of 120A in a D2PAK-2 package | Infineon Technologies | 9,677 | |
| IPB108N15N3 G | N-channel MOSFET transistor by Infineon, capable of handling up to 83A current and 150V voltage, with TO-263 packaging | Infineon Technologies | 8,147 | |
| IPB042N10N3G | 100V, 100A OptiMOS 3 N-channel MOSFET known as IPB042N10N3 G, housed in a D2PAK-2 package | Infineon Technologies | 5,855 | |
| IPB042N10N3GATMA1 | MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3 | Infineon Technologies | 6,263 | |
| IPB083N10N3 G | High-performance Infineon IPB083N10N3 G N-channel MOSFET Transistor | Infineon Technologies | 6,578 | |
| IPB100N04S4-H2 | Infineon IPB100N04S4-H2 N-channel MOSFET Transistor, 100 A, 40 V, 3-Pin TO-263 | INFINEON | 8,130 | |
| IPB120N06S4-02 | Infineon IPB120N06S4-02 N-channel MOSFET Transistor, 120 A, 60 V, 3-Pin TO-263 | INFINEON | 5,576 | |
| IPB123N10N3 G | With a power dissipation of 94W at a voltage drop of 3.5V and a current of 46uA, this MOSFET is capable of handling significant power levels | INFINEON | 8,012 | |
| IPB50R299CP | Infineon IPB50R299CP N-channel MOSFET Transistor, 12 A, 550 V, 3-Pin TO-263 | Infineon Technologies | 9,315 | |
| IPB60R160C6 | N-Channel MOSFET Transistor IPB60R160C6 | Infineon Technologies | 9,892 | |
| IPB60R600CP | Transistor MOSFET N-channel with a 650V rating and 6.1A current in a TO-263 package on tape and reel | Infineon Technologies | 5,819 | |
| IPB65R110CFD | Infineon IPB65R110CFD N-channel MOSFET Transistor, 31.2 A, 650 V, 3-Pin TO-263 | INFINEON | 5,992 | |
| IPB65R110CFDAATMA1 | RoHS-compliant 3-pin D2PAK package | Infineon Technologies | 5,136 | |
| IPB70N10S3-12 | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | INFINEON | 8,558 | |
| IPB80N04S4-04 | Infineon IPB80N04S4-04 N-channel MOSFET Transistor, 80 A, 40 V, 3-Pin TO-263 | INFINEON | 3,893 | |
| IPB80P03P4L-04 | Infineon IPB80P03P4L-04 P-channel MOSFET Transistor, 80 A, -30 V, 3-Pin TO-263 | INFINEON | 7,618 | |
| IPB90N06S4-04 | Infineon IPB90N06S4-04 N-channel MOSFET Transistor, 90 A, 60 V, 3-Pin TO-263 | INFINEON | 7,269 |