inventory:7,585
ADI
SOIC-8
SOT-23-3
(1065)
The TO-236-3 (Transistor Outline 236-3) provides a reliable and space-efficient packaging solution for integrated circuits in advanced electronic systems. With its 3-lead configuration, this package is designed for optimal thermal performance and minimal footprint, making it suitable for various applications in telecommunications, automotive, and consumer electronics sectors.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| BSS126H6327XTSA2 | SOT23 PNP Transistor with 250x Amplification Factor, 45V VCE and 800mA IC Rating | Infineon Technologies | 5,451 | |
| MMBT8099LT1G | In stock, ships today | International Rectifier | 6,063 | |
| PMV32UP,215 | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | Nexperia USA Inc. | 8,308 | |
| SI2393DS-T1-GE3 | P-Channel 30-V (D-S) MOSFET SOT-23 , 22.7 m @ 10V m @ 7.5V 33 m @ 4.5V | VISHAY SILICONIX | 6,202 | |
| BSH103,235 | TO-236AB package | Nexperia | 8,934 | |
| MAX809SEUR-T | Fixed voltage detector | MAXIM | 7,305 | |
| MMBZ15VALT1G | ESD Suppressor Diode Zener Uni-Dir/Bi-Dir 12V 15Vbr 21Vc 3-Pin SOT-23 T/R | International Rectifier | 8,363 | |
| SI2337DS-T1-GE3 | SI2337DS-T1-GE3 P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay | VISHAY SILICONIX | 7,574 | |
| AZ431LBNTR-G1 | Voltage reference | Diodes Incorporated | 7,853 | |
| SST2222AT116 | 3-Pin SST NPN Transistor manufactured by ROHM, model SST2222AT116, with a rated current of 600 mA and a rated voltage of 40 V | Rohm Semiconductor | 60,000 | |
| NCP432BISNT1G | V-Ref Adjustable 2.5V to 36V 100mA 3-Pin SOT-23 T/R | onsemi | 622,346 | |
| 1SS193,LF | Switching Rectifier Diode 85V 0.1A 4ns 3-Pin S-Mini T/R | Toshiba Semiconductor and Storage | 300,000 | |
| 2SC2712-GR,LF | The 2SC2712-GR,LF is an NPN transistor capable of handling voltages up to 50V and dissipating power up to 150mW at a collector current of 2mA | Toshiba | 8,996 | |
| 2SK1581-T1B-A | Null SC-59 2SK1581-T1B-A MOSFET boasting a threshold voltage of 1.6V at 10uA, ROHS compliance, and a power handling capacity of 200mW at 4V | Renesas | 2,000 | |
| STZC6.8NT146 | Diode Zener Dual Common Anode 6.8V 5% 200mW Automotive 3-Pin SMD T/R | Rohm Semiconductor | 99,820 | |
| SB02-09C-TB-E | 0.2A Fast Acting Diode with 10ns Response Time | onsemi | 5,824 | |
| DMN100-7-F | 30V 1.1A 500mW N Channel SOT-23 MOSFET with 240mΩ at 10V | Diodes Incorporated | 8,493 | |
| FDN86265P | Trans MOSFET P-CH Si 150V 0.8A 3-Pin SOT-23 T/R | onsemi | 9,295 | |
| BZX84-B18,215 | Diode Zener Single 18V 2% 250mW 3-Pin SOT-23 T/R | Nexperia USA Inc. | 7,206 | |
| DB3X314K0L | Schottky Barrier Diodes | Panasonic Electronic Components | 9,833 | |
| RR112-1G42-531 | Device detecting changes in magnetic field resistance | Coto Technology | 1 | |
| MMBZ27VCL,215 | ESD Suppressor Diode TVS Uni-Dir/Bi-Dir 22V 38Vc Automotive AEC-Q101 3-Pin SOT-23 T/R | Nexperia USA Inc. | 9,349 | |
| BZX84-A6V2,215 | Diode Zener Single 6.2V 1% 250mW 3-Pin SOT-23 T/R | Nexperia USA Inc. | 1 | |
| MMBD914LT3G | This SOT-23 package houses a single 200mA diode, offering rapid switching capabilities with a response time of 4ns | onsemi | 5,138 | |
| 11AA010T-I/TT | EEPROM UNI/O Serial 1K-bit | Microchip Technology | 7,246 | |
| 11AA160T-I/TT | 1.8V Serial EEPROM with 16Kb capacity | Microchip Technology | 7,157 | |
| 11LC010T-I/TT | EEPROM with 1Kb memory and 2.5V UNI/O® Serial operation | Microchip Technology | 9,160 | |
| 2N7002K,215 | Transistor with 340 mA Current and 60 V Voltage Capability | NEXPERIA | 5,622 | |
| 2SB1197KT146Q | In stock and RoHS certified for quick delivery | Rohm Semiconductor | 9,344 | |
| 2SB1197KT146R | 2 V, 800 mA, PNP, SMALL SIGNAL TRANSISTOR | Rohm Semiconductor | 6,082 | |
| 2SB709A | 5 V TO-236 Transistor | Panasonic Electronic Components | 7,071 | |
| 2SK3666-3-TB-E | N-channel Junction Field-Effect Transistor (JFET) with a voltage rating of 30V and a maximum current of 10mA in a 3-pin SC-59 package | onsemi | 7,843 | |
| 2SK932-23-TB-E | High-frequency low-noise amplifier applications | onsemi | 8,273 | |
| 2V7002LT3G | 60V N-Channel Small Signal MOSFET with 115mA Drain Current and 7.5 Ohm On-Resistance | onsemi | 5,850 | |
| 3LN01C-TB-E | ON Semiconductor N-channel MOSFET Transistor | onsemi | 7,849 | |
| 50C02CH-TL-E | Trans GP BJT NPN 50V 0.5A 700mW 3-Pin CPH T/R | onsemi | 8,684 | |
| ADR5040BRTZ-REEL7 | Get reliable voltage regulation with the Analog Devices ADR5040BRTZ-REEL7 voltage reference | ADI | 6,880 | |
| ADTC114ECAQ-7 | 310mW power handling capability | DIODES | 8,740 | |
| AH173-WG-7-A | Hall Effect Sensor 25mA Bipolar Latch 3.3V/5V/9V/12V/15V/18V 3-Pin SC-59 T/R | Diodes Incorporated | 6,748 | |
| AH1751-WG-7-A | Bipolar Hall Effect 3.5V to 20V DC 50mA Board Mount Hall Effect | Diodes Incorporated | 5,174 | |
| AH1806-W-7 | Advanced digital switching solution for robust control | Diodes Incorporated | 9,252 | |
| AH1815-W-7 | 3-Pin Hall Effect Sensor AH1815-W-7: 2.5mA, Omnipolar, 3V/5V | Diodes Incorporated | 5,339 | |
| AH183-WG-7 | Unipolar CMOS magnetic sensor for measuring up to 10mA | Diodes Incorporated | 7,575 | |
| AH3372-SA-7 | High-density digital switch for compact designs | Diodes Incorporated | 7,292 | |
| AH3574-SA-7 | Robust and compact device for high-voltage sensing | DIODES | 7,851 | |
| AO3160E | Transistor for signal processing in portable electronics | International Rectifier | 5,301 | |
| AOZ8212CI-05L | TVS Bi-Dir ESD Suppressor for 5V Protection | Alpha & Omega Semiconductor Inc. | 9,935 | |
| AQ24CANFD-02HTG | SOT23-3 ESD Suppressors / TVS Diodes, 210W Capacity | Littelfuse Inc. | 7,753 | |
| AZ23C12-7-F | Dual Zener AEC-Q101 Qualified Diodes, 12V 300mW Zener | Diodes Incorporated | 8,685 | |
| AZ23C5V6-7 | Zener Diodes with a voltage rating of 5.6V and power dissipation of 300mW | Diodes Incorporated | 6,071 |