SOT-23
(1065)
The TO-236-3 (Transistor Outline 236-3) provides a reliable and space-efficient packaging solution for integrated circuits in advanced electronic systems. With its 3-lead configuration, this package is designed for optimal thermal performance and minimal footprint, making it suitable for various applications in telecommunications, automotive, and consumer electronics sectors.
Part Number | Description | Manufacturers | Inventory | Add To Bom |
---|---|---|---|---|
BSS126H6327XTSA2 | SOT23 PNP Transistor with 250x Amplification Factor, 45V VCE and 800mA IC Rating | Infineon Technologies | 5,451 | |
MMBT8099LT1G | In stock, ships today | onsemi | 6,063 | |
PMV32UP,215 | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | Nexperia USA Inc. | 8,308 | |
SI2393DS-T1-GE3 | P-Channel 30-V (D-S) MOSFET SOT-23 , 22.7 m @ 10V m @ 7.5V 33 m @ 4.5V | Vishay Siliconix | 6,202 | |
BSH103,235 | TO-236AB package | Nexperia | 8,934 | |
MAX809SEUR-T | Fixed voltage detector | Analog Devices Inc./Maxim Integrated | 7,305 | |
MMBZ15VALT1G | ESD Suppressor Diode Zener Uni-Dir/Bi-Dir 12V 15Vbr 21Vc 3-Pin SOT-23 T/R | onsemi | 8,363 | |
SI2337DS-T1-GE3 | SI2337DS-T1-GE3 P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay | Vishay Siliconix | 7,574 | |
11AA010T-I/TT | EEPROM UNI/O Serial 1K-bit | Microchip Technology | 7,246 | |
11AA160T-I/TT | 1.8V Serial EEPROM with 16Kb capacity | Microchip Technology | 7,157 | |
11LC010T-I/TT | EEPROM with 1Kb memory and 2.5V UNI/O® Serial operation | Microchip Technology | 9,160 | |
2N7002K,215 | Transistor with 340 mA Current and 60 V Voltage Capability | Nexperia | 5,622 | |
2SB1197KT146Q | In stock and RoHS certified for quick delivery | Rohm Semiconductor | 9,344 | |
2SB1197KT146R | 2 V, 800 mA, PNP, SMALL SIGNAL TRANSISTOR | Rohm Semiconductor | 6,082 | |
2SB709A | 5 V TO-236 Transistor | Panasonic Electronic Components | 7,071 | |
2SK3666-3-TB-E | N-channel Junction Field-Effect Transistor (JFET) with a voltage rating of 30V and a maximum current of 10mA in a 3-pin SC-59 package | onsemi | 7,843 | |
2SK932-23-TB-E | High-frequency low-noise amplifier applications | onsemi | 8,273 | |
2V7002LT3G | 60V N-Channel Small Signal MOSFET with 115mA Drain Current and 7.5 Ohm On-Resistance | onsemi | 5,850 | |
3LN01C-TB-E | ON Semiconductor N-channel MOSFET Transistor | onsemi | 7,849 | |
50C02CH-TL-E | Trans GP BJT NPN 50V 0.5A 700mW 3-Pin CPH T/R | onsemi | 8,684 | |
ADR5040BRTZ-REEL7 | Get reliable voltage regulation with the Analog Devices ADR5040BRTZ-REEL7 voltage reference | Analog Devices | 6,880 | |
ADTC114ECAQ-7 | 310mW power handling capability | Diodes Incorporated | 8,740 | |
AH173-WG-7-A | Hall Effect Sensor 25mA Bipolar Latch 3.3V/5V/9V/12V/15V/18V 3-Pin SC-59 T/R | Diodes Incorporated | 6,748 | |
AH1751-WG-7-A | Bipolar Hall Effect 3.5V to 20V DC 50mA Board Mount Hall Effect | Diodes Incorporated | 5,174 | |
AH1806-W-7 | Advanced digital switching solution for robust control | Diodes Incorporated | 9,252 | |
AH1815-W-7 | 3-Pin Hall Effect Sensor AH1815-W-7: 2.5mA, Omnipolar, 3V/5V | Diodes Incorporated | 5,339 | |
AH183-WG-7 | Unipolar CMOS magnetic sensor for measuring up to 10mA | Diodes Incorporated | 7,575 | |
AH3372-SA-7 | High-density digital switch for compact designs | Diodes Incorporated | 7,292 | |
AH3574-SA-7 | Robust and compact device for high-voltage sensing | Diodes Incorporated | 7,851 | |
AO3160E | Transistor for signal processing in portable electronics | Alpha & Omega Semiconductor Inc. | 5,301 | |
AOZ8212CI-05L | TVS Bi-Dir ESD Suppressor for 5V Protection | Alpha & Omega Semiconductor Inc. | 9,935 | |
AQ24CANFD-02HTG | SOT23-3 ESD Suppressors / TVS Diodes, 210W Capacity | Littelfuse Inc. | 7,753 | |
AZ23C12-7-F | Dual Zener AEC-Q101 Qualified Diodes, 12V 300mW Zener | Diodes Incorporated | 8,685 | |
AZ23C5V6-7 | Zener Diodes with a voltage rating of 5.6V and power dissipation of 300mW | Diodes Incorporated | 6,071 | |
AZ432ANTR-E1 | Voltage Reference with 1 Output, Two Terminals, Adjustable Trim, BIPolar | Diodes Incorporated | 9,128 | |
BAR46FILM | Rectifier Diode Small Signal Schottky 100V 0.15A 3-Pin SOT-23 T/R | STMicroelectronics | 5,578 | |
BAR18FILM | 70-volt Schottky diodes and rectifiers capable of handling currents up to 70mA | STMicroelectronics NV | 5,544 | |
BAR6404E6327HTSA1 | Automotive PIN Diode Attenuator/Switch, 150V Voltage Rating, 100mA Current Rating, SOT-23 Package | Infineon Technologies | 5,522 | |
BAR66E6327HTSA1 | Diode PIN Surge Protection 150V 3-Pin SOT-23 T/R - Tape and Reel | Infineon Technologies | 6,997 | |
BAS31,215 | Rectifier Diode Switching 110V 0.25A 50ns Automotive AEC-Q101 3-Pin SOT-23 T/R | Nexperia USA Inc. | 8,928 | |
BAS35,215 | BAS29, BAS31, and BAS35 are general purpose controlled avalanche diodes with double functionality | NXP Semiconductors | 7,452 | |
BAT18,215 | BAT18, enclosed in a TO-236AB package, functions as a PIN diode switch capable of managing currents up to 100mA and voltages up to 35V | NXP Semiconductors | 6,133 | |
BAT6405E6327HTSA1 | Rectifier Diode | Infineon Technologies | 6,560 | |
BAT6804E6327HTSA1 | BAT6804E6327HTSA1, part of the BAT6804 Series, is an RF diode built on a Schottky platform | Infineon Technologies | 8,884 | |
BB804SF2E6327HTSA1 | Variable Capacitance Diode SOT-23 18V 50mA | Infineon Technologies | 5,159 | |
BBY40,215 | Varactor Diode Single 30V 26pF 3-Pin TO-236AB T/R | NXP USA Inc. | 7,942 | |
BC818-40LT1G | Product BC818-40LT1G is a NPN Bipolar Transistor with a maximum voltage of 25V and power dissipation of 225mW | onsemi | 5,263 | |
BCR523E6327HTSA1 | Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR | Infineon Technologies | 7,050 | |
BCX70J,215 | Trans GP BJT NPN 45V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Nexperia USA Inc. | 6,321 | |
BFQ67,215 | Transistor Gp Bjt NPN 10V 0.05A 3-PIN TO-236AB T/r | NXP USA Inc. | 6,833 |