SOT-23
(1065)
The TO-236-3 (Transistor Outline 236-3) provides a reliable and space-efficient packaging solution for integrated circuits in advanced electronic systems. With its 3-lead configuration, this package is designed for optimal thermal performance and minimal footprint, making it suitable for various applications in telecommunications, automotive, and consumer electronics sectors.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| BSH103,235 | TO-236AB package | Nexperia | 8,934 | |
| MMBT8099LT1G | In stock, ships today | onsemi | 6,063 | |
| MAX809SEUR-T | Fixed voltage detector | Analog Devices Inc./Maxim Integrated | 7,305 | |
| MMBZ15VALT1G | ESD Suppressor Diode Zener Uni-Dir/Bi-Dir 12V 15Vbr 21Vc 3-Pin SOT-23 T/R | onsemi | 8,363 | |
| SI2337DS-T1-GE3 | SI2337DS-T1-GE3 P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay | Vishay Siliconix | 7,574 | |
| BSS126H6327XTSA2 | SOT23 PNP Transistor with 250x Amplification Factor, 45V VCE and 800mA IC Rating | Infineon Technologies | 5,451 | |
| PMV32UP,215 | Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R | Nexperia USA Inc. | 8,308 | |
| SI2393DS-T1-GE3 | P-Channel 30-V (D-S) MOSFET SOT-23 , 22.7 m @ 10V m @ 7.5V 33 m @ 4.5V | Vishay Siliconix | 6,202 | |
| PESD2CANFD24L-TR | Safeguards against ESD for automotive communication systems | Nexperia | 7,642 | |
| BSS123E6327 | N-Channel surface mount transistor with a voltage rating of 100 V and a current rating of 170mA | Infineon Technologies | 5,109 | |
| BSS123NH6433XTMA1 | Small outline transistor with 100V VDS and 190mA ID | Infineon Technologies | 5,836 | |
| BSS84P-E6327 | Established in 1988, a leading electronic distributor based in France | Infineon Technologies | 5,164 | |
| BSH105,215 | SOT23 TO-236AB MOSFET BSH105 | Nexperia | 6,322 | |
| BSH205,215 | MOSFET Tape7 MOSFET BSH205,215 | Nexperia | 9,685 | |
| BSS138N-E6327 | Silicon N-CHANNEL MOSFET designed for small signal applications with a maximum current of 230 mA and voltage of 60 V | Infineon Technologies | 5,780 | |
| BSS84TA | Product BSS84TA is a P-channel MOSFET with a voltage rating of 50V and a current rating of 0.13A in a 3-pin SOT-23 package on tape and reel | Diodes Incorporated | 8,235 | |
| AM23ESGC | High efficiency red and super bright green | Kingbright America LLC | 6,032 | |
| 2N7002-T1-E3 | Small-outline transistor MOSFET with N-channel configuration, designed for operation at voltages up to 60 volts and currents up to 0 | Vishay | 5,655 | |
| 2N7002KQ-7 | The 2N7002KQ-7 MOSFET by Diodes Inc | Diodes Incorporated | 7,530 | |
| 2N7002K,215 | Transistor with 340 mA Current and 60 V Voltage Capability | Nexperia | 5,622 | |
| 2N7002E-7-F | MOSFET with ENHANCEMENT MODE, N-CHANNEL | Diodes Incorporated | 6,180 | |
| 2N7002-T1-GE3 | Transistor MOSFET | Vishay | 5,943 | |
| 2N7002-E3 | 2N7002-E3 MOSFET substitute | Vishay | 8,762 | |
| 2V7002LT3G | 60V N-Channel Small Signal MOSFET with 115mA Drain Current and 7.5 Ohm On-Resistance | onsemi | 5,850 | |
| 3LN01C-TB-E | ON Semiconductor N-channel MOSFET Transistor | onsemi | 7,849 | |
| BSS84AHZGT116 | The BSS84AHZGT116 Mosfet is a P-channel transistor designed to handle up to 60V and 0 | ROHM Semiconductor | 7,656 | |
| ZVN3310F | Small Signal Field-Effect Transistor with 0.1A I(D) and 100V | Diodes Incorporated | 9,165 | |
| MMFTN138 | The MMFTN138 FET from Diotec is an N channel device rated for 50 volts and 0.22 amps, and packaged in SOT-23 | Diotec Semiconductor AG | 6,380 | |
| DMN2041L-7 | 6.4A N-channel MOSFET with a source voltage of 20V | Diodes Incorporated | 7,419 | |
| SSTA56HZGT116 | 80V PNP Bipolar Transistor | ROHM Semiconductor | 6,572 | |
| SST3904HZGT116 | 40V NPN Bipolar Transistors | ROHM Semiconductor | 8,976 | |
| MMBT3904LT1HTSA1 | SOT-23-3 Surface Mount Transistor, specifically designed for switching applications, with NPN polarity and Silicon construction | Infineon Technologies | 9,318 | |
| FMMT723QTA | 100V Breakdown Voltage | Diodes Incorporated | 9,516 | |
| NSS12200LT1G | PNP Bipolar Junction Transistor for General Purpose Applications, 12V, 2A, 540mW, 3-Pin SOT-23 Package on Tape and Reel | onsemi | 6,592 | |
| MSD602-RT1G | Small Signal NPN Bipolar Junction Transistor with 50V Maximum Voltage and 0.5A Continuous Current | onsemi | 8,217 | |
| MSC2712GT1G | The product MSC2712GT1G is a NPN bipolar transistor, designed to handle currents up to 100mA and voltages up to 60V | onsemi | 7,006 | |
| SBC857BLT1G | PNP bipolar transistor configuration | onsemi | 5,641 | |
| BCW72LT1G | Transistor General Purpose NPN 45V 0.1A SOT-23 | onsemi | 7,861 | |
| MMBT589LT1G | MMBT589LT1G is a PNP general-purpose bipolar junction transistor with a voltage rating of 30V and a current rating of 1A | onsemi | 8,526 | |
| SMMBT3906LT1G | 100@10mA,1V 200mA ROHS Compliant | onsemi | 6,380 | |
| NSV40200LT1G | Small-outline Transistor for Automotive Applications with 2 Ampere Current Handling Capability | onsemi | 7,784 | |
| NSV1C201LT1G | 710mW Power Dissipation NPN Transistor for Automotive Use | onsemi | 8,744 | |
| BC856BLT3G | Transistor general purpose PNP 65V 0.1A SOT-23 | onsemi | 7,014 | |
| BC846CLT1G | BC846CLT1G Bipolar Transistor NPN 65 Volts 100 Milliamps 100 Megahertz 225 Milliwatts | onsemi | 8,412 | |
| BC818-40LT1G | Product BC818-40LT1G is a NPN Bipolar Transistor with a maximum voltage of 25V and power dissipation of 225mW | onsemi | 5,263 | |
| SMMBT4403LT1G | This device has a breakdown voltage (V(BR)CEO) of 40V and is designed for small signal applications | onsemi | 9,140 | |
| SMMBTA92LT1G | 3-Pin SOT-23 Transistor SMMBTA92LT1G | onsemi | 7,092 | |
| SMMBTA56LT1G | PNP Bipolar Transistor SMMBTA56LT1G by ON Semiconductor: 0.5 A, 80 V, 3-Pin SOT-23 | onsemi | 6,390 | |
| MMBT5088LT1G | Small signal NPN transistor with 50 milliamp current and 30 volt voltage rating | onsemi | 5,625 | |
| MMBTA14LT1 | These transistors are NPN Darlington-type, capable of handling currents up to 300mA and voltages of 30V | onsemi | 5,781 |