TO-220AB
(128)
The TO-220AB (Transistor Outline 220AB) provides a robust and reliable packaging solution for power semiconductors in various electronic applications. With its versatile design and ease of mounting, this package is well-suited for high-power devices in industries such as automotive, industrial, and power supply.
| Part Number | Description | Brands | Inventory | Add To Bom |
|---|---|---|---|---|
| IRF2903ZPBF | TO-220AB MOSFET transistor in N-channel with 30V and 260A - Rail/Tube | INFINEON | 6,746 | |
| IRFBC30APBF | Trans MOSFET N-CH 600V 3.6A | VISHAY | 3,993 | |
| VNP20N07-E | Lo side power switch 20A TO-220 | Stmicroelectronics | 7,214 | |
| IRFB7534PBF | Detailed Specs: 100A continuous current capability, with a power dissipation of 294W at 3.7V and 250uA | INFINEON | 7,840 | |
| IRLB8743PBF | IRLB8743PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon | International Rectifier | 4,121 | |
| 2SK2608 | N-Channel Silicon MOSFET | Toshiba | 4,312 | |
| BTA16-800CW3G | Lead-free TO-220AB TRIAC, designed with snubberless technology for 800 volts V(DRM) and 16 amps I(T)RMS capability | Littelfuse | 7,636 | |
| IRFB9N65APBF | IRFB9N65APBF MOSFET, N-type, rated for 650 volts and 8.5 amps, housed in TO-220 package | Vishay | 4,886 | |
| 2N6403 | Robust and efficient component for high-voltage switching need | onsemi | 5,704 | |
| 2N6404G | Discrete Thyristor Single 16A 600V TO220 Through-Hole Mounting | Littelfuse | 6,178 | |
| 2N6507G | 2N6507G is an SCR (Silicon Controlled Rectifier) boasting a robust 400V voltage rating and a capable 25A RMS current handling capacity | Littelfuse | 6,541 | |
| 2SK1119(F) | A 1000V, 4A N-channel MOSFET enclosed in a TO-220AB package | Toshiba | 6,870 | |
| IRF634PBF | Power MOSFET, N-Type, 250V, HEXFET | VISHAY | 8,038 | |
| IRF9620PBF | P-Channel Silicon Metal-oxide Semiconductor FET with a resistance of 1.5 ohms | VISHAY | 5,170 | |
| IRF9Z34PBF | Trans MOSFET P-CH 60V 18A | VISHAY | 6,796 | |
| IRFB812PBF | Power MOSFET suitable for electronic circuits requiring N-channel switching functionality, featuring a TO-220AB package for easy mounting | Infineon Technologies | 3,854 | |
| IRFBE20PBF | Product Description: 800V 1.8A N Channel MOSFET with 6.5Ω resistance | Vishay | 5,930 | |
| IRL520PBF | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) Vishay Siliconix IRL520PBF N-channel MOSFET Transistor, 9.2 A, 100 V, 3-Pin TO-220AB | VISHAY | 5,053 | |
| IRL640PBF | Trans MOSFET N-CH 200V 17A | VISHAY | 4,442 | |
| IRLZ24PBF | Describing IRLZ24PBF | VISHAY | 8,621 | |
| IRSF3010 | IRSF3010 is a high-performance N channel power MOSFET capable of handling up to 40W of power | INFINEON | 4,212 | |
| MBR1060CTL | MBR1060CTL: Dual 5A 60V Rectification Diodes | SMC Diode Solutions | 4,499 | |
| MBR1640CT | MBR1640CT is a dual common cathode Schottky diode featuring a 40V voltage rating, capable of conducting 16A forward current and 8A reverse current | SMC Diode Solutions | 8,487 | |
| TPH3208PS | High-Power 650V Gallium Nitride FET in TO220 Encapsulation, 20 Amperes | Transphorm | 7,835 | |
| AUIRF3710Z | AUIRF3710Z is an N-channel MOSFET that comes in a TO220AB package, featuring a voltage rating of 100V and a current rating of 59A | Infineon Technologies | 5,801 | |
| IRF840BPBF | TO-220AB package for efficient heat dissipation | Vishay | 5,174 | |
| TS820-600T | TS820-600T: A semiconductor device known as a Thyristor SCR | STMicroelectronics NV | 8,466 | |
| BTB10-600BWRG | A 50mA 600V dual SCR TO-220AB TRIACs ROHS, model BTB10-600BWRG, is available | STMicroelectronics NV | 5,346 | |
| BTB12-600BWRG | Thyristor Triac 600V 12A, PK | STMicroelectronics NV | 5,897 | |
| STPS3045CT | Schottky rectifying diode STPS3045CT features Through Hole Technology | STMicroelectronics NV | 5,960 | |
| STPS30L30CT | Described as a Schottky rectifier diode, STPS30L30CT can handle voltages of 30V and currents of 30A | STMicroelectronics NV | 6,055 | |
| TYN625RG | TYN625RG - Single-Way Thyristor, 600V, 40mA, ITO-220AB-3 Package, ROHS Compliant | STMicroelectronics NV | 6,013 | |
| TYN640RG | TYN640RG is a thyristor with a voltage rating of 600V, capable of handling up to 40A of maximum forward current and 25A of continuous forward current | STMicroelectronics NV | 7,253 | |
| STTH2003CT | With a 300 Volt threshold and 2X10 Amp rating, STTH2003CT serves as a reliable rectifier." | STMicroelectronics NV | 8,056 | |
| IRF1018EPBF | The maximum power dissipation of IRF1018EPBF is 110W | Infineon Technologies | 5,772 | |
| IRLB3813PBF | TO220AB Transistor: N-MOSFET, Unipolar, 30V, 260A, 230W | Infineon Technologies | 5,693 | |
| IRL3103PBF | N-channel silicon power MOSFET with a 30V voltage rating and a maximum continuous drain current of 64A, housed in a TO-220AB package | Infineon Technologies | 7,179 | |
| IRF9520NPBF | Suitable for various applications requiring a P-channel MOSFET with 100V voltage rating and 6.8A current rating | Infineon Technologies | 6,548 | |
| BTB16-800CWRG | BTB16-800CWRG is a 16 Amp 800 Volt Triacs product | Stmicroelectronics | 8,809 | |
| BTB16-800BWRG | BTB16-800BWRG: Triacs designed for applications requiring 16 amps and 600 volts | Stmicroelectronics | 5,928 | |
| STPS20L45CT | Schottky diode with minimal voltage drop | Stmicroelectronics | 5,990 | |
| STPS30150CT | Diode Schottky 150V 30A 3-Pin(3+Tab) TO-220AB Tube | Stmicroelectronics | 9,565 | |
| T405-600T | 600V 31A 3-Pin(3+Tab) TO-220AB Thyristor TRIAC in Tube Packaging - Rail/Tube | Stmicroelectronics | 6,997 | |
| T435-800T | The T435-800T product is a Triac rated for 800V and capable of managing currents of up to 4A | Stmicroelectronics | 9,591 | |
| TYN612RG | The TYN612RG is a ROHS-compliant TRIAC with a maximum current rating of 30mA and 15mA and a voltage rating of 600V | Stmicroelectronics | 8,071 | |
| SCT2120AF | Enhance your driving experience with efficient audio processing. (71 chars) | rohm semiconductor | 6,449 | |
| MTP1N60E | N-Channel Power MOSFET with 600V voltage rating and 1A current rating | onsemi | 7,057 | |
| SR1690 | Compact and efficient Schottky diode with high surge capability and low forward voltage drop | Taiwan Semiconductor | 6,513 | |
| SR2090 | High-speed switching diode for efficient power conversion | Taiwan Semiconductor | 6,353 | |
| IRG4BC40F | Power semiconductor device | Infineon Technologies AG | 5,584 |