TSSOP-6
(67)
The SOT363-6 (Small Outline Transistor 363-6) offers a compact, high-reliability packaging solution for integrated circuits in advanced electronic systems. Designed for thermal efficiency and minimal footprint, this 6-lead configuration is ideal for space-constrained applications across telecommunications, automotive, and consumer electronics sectors.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| DMN5L06DWK-7 | Diodes Inc DMN5L06DWK-7 Dual N-channel MOSFET Transistor, 0.305 A, 50 V, 6-Pin SOT-363 | Diodes Incorporated | 5,064 | |
| ABA-51563-BLKG | Versatile amplifier that operates over a wide frequency range with low power consumption, ideal for various applications | Broadcom Limited | 8,325 | |
| D5V0F4U6S-7 | SOT-363 Package | Diodes Incorporated | 6,220 | |
| DMP2200UDW-7 | Dual Mosfet, P-Ch, 20V, 0.9A, SOT-363 | Diodes Incorporated | 7,387 | |
| SI1900DL-T1-E3 | Small outline transistor with 3V output at low current | Siliconix | 9,643 | |
| SSM6N7002KFU,LF | MOSFET designed for ESD protection in small-signal applications | Toshiba Semiconductor And Storage | 8,559 | |
| 2N7002DWA-7 | Metal-oxide Semiconductor FET N-Channel Small Signal Field-Effect Transistor | Diodes Incorporated | 5,024 | |
| BSD235CH6327XTSA1 | N and P-Channel MOSFET with 20V Vds, 950mA and -530mA Id in SOT-363-6 package | Infineon Technologies | 7,544 | |
| BSD840NH6327XTSA1 | With a current rating of 880 mA and voltage rating of 20 V | Infineon Technologies | 7,325 | |
| DRDNB21D-7 | Diodes Inc, DRDNB21D-7, Dual NPN Digital Transistor, 100 mA 50 V, 6-Pin SOT-363 | Diodes Incorporated | 6,313 | |
| MMDT3946-7-F | Bipolar Transistors - BJT | Diodes Incorporated | 4,597 | |
| SI1902CDL-T1-GE3 | Trans MOSFET N-CH 20V 1A 6-Pin SC-70 T/R | Siliconix | 7,920 | |
| ZXGD3009DYTA | DiodesZetex ZXGD3009DYTA, Dual Non-Inverting Buffer, Maximum of 40 V, 6-Pin SOT-363 | Diodes Incorporated | 6,431 | |
| SGA0363Z | Ideal for Wideband Applications | Qorvo | 9,286 | |
| SGA3563Z | The SGA3563Z is a wide band low power amplifier capable of operating from 0MHz to 5000MHz | Qorvo | 9,466 | |
| ABA-52563-TR1G | Compact and Versatile Radio Frequency Amplification Device | Broadcom Limited | 4,826 | |
| ABA-54563-TR1G | RF Amp Chip Single GP 3.4GHz 6-Pin SOT-363 T/R | Broadcom Limited | 6,299 | |
| BC846AS-7 | BC846AS-7 is a type of Bipolar Junction Transistor (BJT) capable of handling currents up to 100mA and voltages of 65V | Diodes Incorporated | 8,705 | |
| BC847BS-7-F | Transistor Dual NPN 45V 0.1A SOT363-6 | Diodes Incorporated | 4,203 | |
| BSS138DW-7-F | MOSFET Dual N-Channel 50V 0.2A SOT363 Diodes Inc BSS138DW-7-F Dual N-channel MOSFET Transistor, 0.2 A, 50 V, 6-Pin SOT-363 | Diodes Incorporated | 6,150 | |
| DMN2004DWK-7 | Dual N-Channel MOSFET | Diodes Incorporated | 9,164 | |
| DMN65D8LDW-7 | The DMN65D8LDW-7 MOSFETs | Diodes Incorporated | 7,181 | |
| BAV99SH6327XTSA1 | AEC-Q101 compliant rectifier diode designed for automotive systems, capable of swift switching with a response time of 4ns | Infineon Technologies | 5,630 | |
| 2N7002DWH6327XTSA1 | Product Description: Dual N-Channel 60V 3 Ohm 0.4nC OptiMOS Small Signal MOSFET - SOT-363 | Infineon Technologies | 9,273 | |
| DMC3400SDW-13 | Enhancement Mode MOSFET Pair with 30V Voltage Rating, 20Vgs, 55pF Capacitance, and 0.6nC Charge | Diodes Incorporated | 5,027 | |
| PSA-0012+ | Surface-Mount RF Amplifier with RoHS Certification and ESD Protection | Mini-Circuits | 7,533 | |
| 74AVC1T45GW | Integrated Circuit, NXP, 74AVC1T45GW, Reel | NXP | 2,966 | |
| MGA-86563-BLKG | AVAGO TECHNOLOGIES MGA-86563-BLKG RF amplifier MMIC integrated circuit | Broadcom Limited | 6,664 | |
| BFS483H6327XTSA1 | Product BFS483H6327XTSA1 is a 12-volt | Infineon Technologies | 6,257 | |
| BGA2866,115 | RF Amp Single MMIC Amp 2.2GHz 5.5V 6-Pin TSSOP T/R | Freescale Semiconductor | 2,379 | |
| BSS8402DW-7 | Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A 6-Pin SOT-363 T/R | Diodes Incorporated | 5,777 | |
| DDC143ZU-7-F | Biased transistor in SOT363 package, supplied in tape and reel packaging for easy handling | Diodes Incorporated | 6,229 | |
| DDC144TU-7 | Bipolar Transistors - Pre-Biased PREBIASED TRANSISTOR SOT-363 NPN 200MW | Diodes Incorporated | 8,235 | |
| DMP2200UDW-13 | Trans MOSFET P-CH 20V 0.9A 6-Pin SOT-363 T/R | Diodes Incorporated | 5,677 | |
| MMBZ5240BS-7-F | Zener Diode Dual Anti Parallel 10V 5% 17Ohm 200mW 6-Pin SOT-363 T/R | Diodes Incorporated | 5,474 | |
| MMDT4413-7-F | Trans GP BJT NPN/PNP 40V 0.6A 200mW 6-Pin SOT-363 T/R | Diodes Incorporated | 6,322 | |
| SI1869DH-T1-BE3 | Power Switch Hi Side 1-OUT 0.303Ohm 6-Pin SC-70 | Siliconix | 5,917 | |
| DMN32D4SDW-7 | 30 volts, 650 milliamperes, 400 milliohms at 10 volts, 250 milliamperes, 290 milliwatts, 1.6 volts at 250 microamperes N-Channel SOT-363 MOSFETs ROHS | Diodes Incorporated | 2,903 | |
| DRTR5V0U4SL-7 | ESD Suppressor Diode TVS Uni-Dir 5.5V 12.5Vc 6-Pin SOT-363 T/R | Diodes Incorporated | 9,862 | |
| QPA2263ASR | Broadband RF amplifier covering DC to GHz frequency range with high sensitivit | Qorvo | 3,302 | |
| SI1424EDH-T1-GE3 | Trans MOSFET N-CH 20V 4A 6-Pin SC-70 T/R | Siliconix | 9,562 | |
| SI1442DH-T1-GE3 | N-Channel MOSFET SC-70-6, RL | Siliconix | 9,393 | |
| SQ1421EDH-T1_GE3 | Field-effect transistor with 60V P-channel | Siliconix | 5,396 | |
| SQ1912EH-T1_GE3 | Compliant with ROHS regulations | Vishay | 7,645 | |
| SSM6N43FU,LF | Small-signal MOSFET | Toshiba | 7,981 | |
| UMF5NTR | Combination of PNP transistor with low VCE(sat) and NPN digital transistor | Rohm Semiconductor | 7,946 | |
| SMA3103-TL-E | RF Amplifier Single Wideband Amplifier 3.3GHz 5.5V | onsemi | 5,232 | |
| BGA2801,115 | RF Amp Single MMIC Amp 2.2GHz 3.6V 6-Pin TSSOP T/R | NXP Semiconductors | 7,792 | |
| BSS138DW | Microscopic Signal Field-Effect Transistor" | Diodes Incorporated | 7,162 | |
| SI1553CDL-T1-BE3 | 20V/300MA MOSFET | Siliconix | 9,523 |