SOT323-3
(61)
The SOT323-3 (Small Outline Transistor 3-pin) offers a compact, high-reliability packaging solution for integrated circuits in advanced electronic systems. Designed for thermal efficiency and minimal footprint, this 3-pin configuration is ideal for space-constrained applications across telecommunications, automotive, and consumer electronics sectors.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| DMN3067LW-7 | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | Diodes Incorporated | 4,677 | |
| DTC143EUAT106 | ROHS compliant SOT-323 (SC-70) package with 50V voltage rating | Rohm Semiconductor | 6,180 | |
| MCH3484-TL-W | N-channel MOSFET with 0.9V drive capability, part of the TL-W series | onsemi | 5,661 | |
| BSS138WH6327XTSA1 | Automotive-grade N-channel MOSFET designed for a maximum voltage of 60V and a current capability of 0.28A, featuring a compact SOT-323 package | Infineon Technologies | 5,374 | |
| BAS21W-7-F | Rectifier Diode Small Signal Switching 250V 0.4A 50ns 3-Pin SOT-323 T/R | Diodes Incorporated | 4,048 | |
| BAV199WQ-7 | 323-3 Package with 85V Voltage Rating | Diodes Incorporated | 4,909 | |
| BAV70W,115 | Diode Switching 100V 0.175A 3-Pin SC-70 T/R | Nexperia Usa Inc. | 8,194 | |
| BC847BW-7-F | Transistor BC847BW-7-F is an NPN bipolar component with a maximum voltage rating of 45V and a current capability of 0 | Diodes Incorporated | 6,259 | |
| BSS138WH6433XTMA1 | Infineon BSS138WH6433XTMA1 N-channel MOSFET Transistor, 0.28 A, 60 V, 3-Pin SOT-323 | Infineon Technologies | 4,016 | |
| DMG1013UWQ-7 | MOSFET MOSFET BVDSS: | Diodes Incorporated | 5,818 | |
| DMN2058UW-7 | N-Channel MOSFET with a current rating of 3.7A in State and 4.6A Steady, designed by Diodes Inc | Diodes Incorporated | 9,783 | |
| MCH3377-TL-W | Product code MCH3377-TL-W | Onsemi | 9,616 | |
| BSS209PWH6327XTSA1 | Described as BSS209PWH6327XTSA1 | Infineon Technologies | 8,662 | |
| BSS84PWH6327XTSA1 | Detailed Overview: The BSS84PWH6327XTSA1 MOSFET from Infineon is a P-channel device suitable for low-power applications | Infineon Technologies | 6,836 | |
| DMG1013UW-7 | Enhanced MOSFET -20V VDSS P-Channel | Diodes Incorporated | 7,495 | |
| MMST3904-7-F | Surface Mount NPN Bipolar Transistor, 40 Volts, 200 Milliamps, 200 Milliwatts, SOT-323 Package, Tape and Reel | Diodes Incorporated | 6,520 | |
| RJU003N03T106 | N-Channel 200 mW 30 V 1.9 Ohm Surface Mount 2.5 V Drive MosFet - UMT-3 | Rohm Semiconductor | 9,276 | |
| RU1J002YNTCL | MOSFET in N-channel configuration, SOT323FL package, with a maximum rating of 50V and 200mA | Rohm Semiconductor | 8,488 | |
| 1SS302A,LF | Rectifier Diode Switching Si 85V 0.1A 4ns Automotive 3-Pin USM T/R | Toshiba Semiconductor And Storage | 6,850 | |
| DMN62D0UW-7 | N-Channel Enhancement Mode MOSFET | Diodes Incorporated | 7,830 | |
| HSMS-286C-TR1G | Hybrid IC HSMS-286C-TR1G featuring Schottky diode, SMT design, in SOT-323 format | Broadcom Limited | 9,574 | |
| 2SD2351T106V | 50V 150mA NPN BJT transistors | Rohm Semiconductor | 9,643 | |
| BSS84AKW,115 | MOSFET P-Channel 50V with 150mA | Nexperia Usa Inc. | 6,775 | |
| MA4E2054B1-1146T | Schottky Diode for RF Applications, 3V, SOT-323 Package, Tape and Reel | Macom Technology Solutions | 7,440 | |
| BFR183W | NPN Silicon Transistor for Ultra High Frequency Band | Infineon Technologies | 9,705 | |
| BSS138W H6327 | N-Channel Trans MOSFET with 60V Voltage Rating and 0.28A Current | Infineon Technologies | 9,159 | |
| BZX84W-C3V3F | 3V 5% 275mW SC-70 Package | Nexperia | 4,803 | |
| BSS138W-7-F | The BSS138W-7-F is a small-outline transistor (SOT323) featuring N-channel MOSFET technology, supporting voltages of 50V and currents of 0.2A | Diodes Incorporated | 2,642 | |
| HSMS-286B-TR1G | HSMS-286B-TR1G is a Schottky diode with rectification capabilities, boasting a 4 volt breakdown voltage and a minimal capacitance of 0.3 pF | Broadcom | 4,531 | |
| VESD05A2-03GHG3-08 | Automotive ESD Suppressor Diode Array Uni-Dir 5V AEC-Q101 3-Pin SOT-323 T/R | Vishay | 7,283 | |
| VCAN33A2-03GHE3-08 | Automotive ESD Suppressor Diode TVS Bi-Directional 33V | Vishay | 6,992 | |
| VCAN33A2-03G-E3-08 | SOT-323 package with 56V breakdown voltage and 140W power rating | Vishay | 7,267 | |
| SI1330EDL-T1-E3 | N-Channel transistor | Vishay | 3,458 | |
| BSS123WQ-7-F | MOSFET with enhanced performance for N-channel operation, rated for 100V maximum drain-source voltage | Diodes Incorporated | 3,089 | |
| DMG1012UW-7 | MOSFET N-Channel 20V 1A SOT323 Diodes Inc DMG1012UW-7 N-channel MOSFET Transistor, 1 A, 20 V, 3-Pin SOT-323 | Diodes Incorporated | 6,819 | |
| BFR193WH6327XTSA1 | 70@30mA BJT ROHS | Infineon Technologies | 8,750 | |
| MMST2907A-TP | Bipolar Transistors - BJT -600mA -60V | Micro Commercial Co | 3,617 | |
| PJC7412_R1_00001 | 30V P-Channel MOSFET featuring Enhancement Mode Technology | Panjit | 2,110 | |
| VCAN26A2-03GHE3-18 | ESD Suppressor TVS Bi-Dir 26.5V Automotive AEC-Q101 3-Pin SOT-323 T/R | Siliconix | 3,257 | |
| 2SC4215-Y(TE85L,F) | 30V 0.02A 100mW Trans RF BJT NPN 3-Pin USM T/R | Toshiba Semiconductor And Storage | 2,115 | |
| DF3D29FU,LF | ESD Suppressors / TVS Diodes ESD Protection Diode Bi-directional type | Toshiba Semiconductor And Storage | 2,389 | |
| STM1061N31W6F | Processor Supervisor 3.1V 1 Active Low/Open Drain 3-Pin SOT-323 T/R | Stmicroelectronics | 2,412 | |
| PJC7400_R1_00001 | High power dissipation 10V 350mW at low current | Panjit | 3,694 | |
| RRF015P03GTL | Designed for high performance and reliability in various electronic circuits | Rohm Semiconductor | 7,730 | |
| BAT 64-05W H6327 | 40V Dual Common Cathode SOT-323-3 Schottky Barrier Diodes | Infineon Technologies | 7,069 | |
| BC807-40W-7 | PNP Bipolar Junction Transistor | Diodes Incorporated | 8,766 | |
| DTC143XU3HZGT106 | Automotive NPN Digital Transistor with Built-in Bias Resistor (Leak Absorption Type), SOT-323 Package | Rohm Semiconductor | 7,072 | |
| HSMS-286C-BLKG | Schottky diode and rectifier set with 4 VBR rating and minimal 0.3 picoFarad capacitance | Broadcom Limited | 3,855 | |
| HSMS-285B-TR2G | RF Detector for RF/ID signals under 1.5GHz | Broadcom Limited | 4,328 | |
| DTC113ZU3T106 | NPN digital transistor with built-in bias resistor, SOT-323 package, R1 not equal to R2 leak absorption type | Rohm Semiconductor | 5,354 |