SOT-323-3
(60)
The SOT-323-3 (Small Outline Transistor 3-Lead) offers a compact, high-reliability packaging solution for integrated circuits in advanced electronic systems. Designed for thermal efficiency and minimal footprint, this 3-lead configuration is ideal for space-constrained applications across telecommunications, automotive, and consumer electronics sectors.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| 2SC4081T106Q | Bipolar Transistors - BJT NPN 50V 0.15A SOT-32 3 | ROHM Semiconductor | 5,407 | |
| DMN63D8LW-13 | Enhancement Mode N-Channel MOSFET featuring 30V VDS and 20±V VGS | Diodes Incorporated | 6,770 | |
| DMP2165UW-7 | Established French Electronics Provider | Diodes Incorporated | 5,005 | |
| DMP2160UW-7 | Small Signal Field-Effect Transistor | Diodes Incorporated | 8,100 | |
| DTC114EUAT106 | Bipolar transistors pre-biased digital NPN SOT-323 50V 50mA | Rohm Semiconductor | 5,341 | |
| 2N7002W | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-323 T/R | onsemi | 5,377 | |
| BAS16W,115 | Diode Switching 100V 0.175A 3-Pin SC-70 T/R | Nexperia | 8,262 | |
| BC846BW,115 | BC846BW,115 - Bipolar Junction Transistor (BJT) BC846BW/SOT323/SC-70 | Nexperia USA Inc. | 7,711 | |
| 2SC4081U3HZGT106Q | Semiconductor Component | ROHM Semiconductor | 7,043 | |
| NE85630 | NPN High Frequency RF Bipolar Transistors | Nec | 6,558 | |
| BCR141W | BCR141W - Bipolar Transistors with Pre-Biasing | Infineon Technologies | 7,073 | |
| BCR166W | This transistor has a power rating of 250mW and a maximum current rating of 100mA at 50V | Infineon Technologies | 6,006 | |
| PMF370XN,115 | Trans MOSFET N-CH 30V 0.87A 3-Pin SC-70 T/R | Nexperia | 8,582 | |
| 2N7002W-7-F | 323 for easy installation and handling | Diodes Incorporated | 7,284 | |
| 2SC4081T106R | Transistor General Purpose Bipolar Junction Transistor NPN 50 Volts 0.15 Amps 3-Pin Ultra Miniature Transistor/Reel | Onsemi | 9,792 | |
| BAS70W-05-7-F | 70V Schottky diodes and rectifiers with 200mW power | Diodes Incorporated | 3,814 | |
| BAT54SW-7-F | RL Variant of BAT54SW-7-F Schottky Diode | Diodes Incorporated | 5,747 | |
| BAV99W,115 | ROHS compliant SOT-323-3 package containing two 1.25V diodes | Nexperia | 8,978 | |
| BC847CW,115 | small plastic package housing general-purpose npn transistors in a surface-mount design | Nexperia | 7,490 | |
| MMST3906-7-F | SMD Transistor with PNP Polarization, Suitable for General Purpose Circuit Design, 40V Voltage Rating, 0.2A Current Rating, 200mW Power Dissipation | Diodes Incorporated | 7,262 | |
| BAR64-04W | Pin Diode with 200V V(BR) and Silicon Material in SOT-323 Package | infineon | 9,196 | |
| BCR133W | BCR133W - NPN Bipolar Junction Transistor for Automotive Applications, 50V, 100mA, SOT-323 Package | infineon | 9,171 | |
| BCR116W | NPN Silicon Transistor with SOT-323 Package | infineon | 6,978 | |
| BCR198W | Pre-Biased Bipolar Transistors | Infineon | 6,591 | |
| BCR135W | -pin configuration | infineon | 7,615 | |
| BCR108W | Pre-Biased Bipolar Transistors | infineon | 8,744 | |
| BAR63-04W | Description: PIN diode with a 50V breakdown voltage, made of silicon, packaged in a ROHS-compliant package | infineon | 9,778 | |
| BBY66-05W | variable capacitance diodes | infineon | 7,249 | |
| PMF370XN | N-channel TrenchMOS extremely low level FET | nexperia | 5,742 | |
| BCR185W | High-voltage PNP Silicon Transistor for Automotive Applications | infineon | 7,372 | |
| BAR64-05W | Silicon PIN diode with a 150V breakdown voltage, housed in a ROHS compliant package-3 | infineon | 5,345 | |
| BAS40-04W,115 | Diode Schottky BAS40-04W,115 with 0.12A and 3 pins in SC-70 package | Nexperia USA Inc. | 8,541 | |
| DMN2065UW-7 | SOT-323 packaged N-channel MOSFET with 20V voltage rating, 2.8A current rating, supplied on tape and reel | Diodes Incorporated | 8,245 | |
| ESDCAN02-2BWY | ESD Suppressor Diode TVS Bi-Dir 26.5V 44Vc Automotive AEC-Q101 3-Pin SOT-323 T/R | ST | 6,521 | |
| ESDCAN04-2BWY | ESD Suppressor Diode TVS Bi-Dir 25.5V 43Vc Automotive AEC-Q101 3-Pin SOT-323 T/R | ST | 7,050 | |
| MCH3478-TL-W | Channel MOSFET Transistor 30V 2A 3-Pin | onsemi | 8,695 | |
| NX7002AKW,115 | Field-effect transistor NX7002AKW/SOT323/SC-70 | Nexperia | 7,027 | |
| RAL035P01TCR | Described as a Silicon Metal-oxide Semiconductor FET, RAL035P01TCR is a P-channel transistor capable of handling currents up to 3 | Rohm Semiconductor | 9,415 | |
| RU1C001UNTCL | Single-element silicon transistor ideal for implementing as a switch or amplifier in electronic circuits | Rohm Semiconductor | 5,610 | |
| SI1308EDL-T1-GE3 | N-channel MOSFET rated for 1.4A and 30V, housed in an SC70 package | Vishay | 6,499 | |
| ESDCAN06-2BWY | ESD Suppressor Diode TVS Bi-Dir 35V 59Vc Automotive AEC-Q101 3-Pin SOT-323 T/R | ST | 6,760 | |
| BAV199W,115 | Diode Switching 85V 0.135A 3-Pin SC-70 T/R | Nexperia USA Inc. | 8,604 | |
| ESDCAN03-2BWY | ESD Suppressor TVS Bi-Dir 24V Automotive AEC-Q101 3-Pin SOT-323 T/R | ST | 6,027 | |
| RHU002N06T106 | Small Signal N-Channel MosFet in UMT-3 Package, Rated for 200 mW Power, 60 V Voltage, and 2.4 Ohm Resistance | Rohm Semiconductor | 9,961 | |
| BC860CW | Compact power amplifier for audio applications | INFINEON/PHILIPS | 5,238 | |
| BCR148W | BCR148W is a type of pre-biased bipolar transistor | infineon | 6,808 | |
| BCR183W | small signal PNP silicon transistor | infineon | 5,137 | |
| SBC847BWT1G | High-performance transistor for automotive applications availab | onsemi | 9,844 | |
| BSS84PW H6327 | P-Channel 60V 0.15A Automotive MOSFET in SOT-323 Package | Infineon Technologies | 3,068 | |
| BSS123W-7-F | BSS123W-7-F, 0805 0.22 uF 50 V ±10 % Tolerance X7R Surface Mount Multilayer Ceramic Capacitor | Diodes Incorporated | 4,951 |