SOT-323
(63)
The SOT-323 (Small Outline Transistor) provides a compact, high-reliability packaging solution for integrated circuits in advanced electronic systems. Designed for thermal efficiency and minimal footprint, this 3-lead configuration is ideal for space-constrained applications across telecommunications, automotive, and consumer electronics sectors.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| DMN3150LW-7 | Small Signal Field-Effect Transistor | Diodes Incorporated | 4,354 | |
| BAV99W | Diode Small Signal Switching 85V 0.15A 3-Pin SOT-323 T/R | Diodes Incorporated | 6,569 | |
| BC847BW | Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SOT-323 T/R | Yangjie Technology | 5,569 | |
| DMN65D8LW-7 | N-Channel MOSFET with a 300 mA current rating and 60 V voltage tolerance | Diodes Incorporated | 5,563 | |
| DMN67D8LW-13 | Transistor MOSFET for N-Channel Operation at 60 Volts and 0.24 Amperes | Diodes Incorporated | 7,981 | |
| BAW56W | Rectifier Diode Small Signal Switching 85V 0.15A 4ns 3-Pin SOT-323 T/R | Diotec Semiconductor AG | 5,045 | |
| BC817-40W | Trans GP BJT NPN 45V 0.5A 200mW 3-Pin SOT-323 T/R | Yangjie Technology | 8,630 | |
| BC847CW | Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SOT-323 T/R | Yangjie Technology | 3,945 | |
| BC817-40W-7 | Bipolar Transistors - BJT NPN SURFACE MOUNT SMALL SIGNAL TRANS | Diodes Incorporated | 5,004 | |
| BC857CW,115 | The BC857CW,115 transistor is suitable for a variety of electronic applications requiring PNP bipolar transistors | Nexperia | 8,067 | |
| BSS138W-TP | SOT-323 Packaged N-Channel MOSFET Transistor rated for 50V and 0.22A with Tape and Reel Packaging | MCC | 5,909 | |
| DMN601WK-7 | This MOSFET has a power dissipation of 200mW and a 2Ω resistance at 10V | Diodes Incorporated | 3,915 | |
| BC817-25W | NPN, 45V, 0.5A, SOT323 | Yangjie Technology | 5,585 | |
| DMN2004WK-7 | type metal-oxide-semiconductor field-effect transistor | Diodes Incorporated | 4,993 | |
| BC849CW | Bipolar Transistors - BJT | Diotec Semiconductor | 6,389 | |
| DESD1CAN2WQ-7 | SOT323 PP general protection in tape and reel packaging | Diodes Incorporated | 8,423 | |
| DESD1P0RFWQ-7 | Silicon-based Transient Voltage Suppressor Diode with 70V Reverse Working Voltage, Unidirectional Configuration, Green Plastic Package-3 | Diodes Incorporated | 6,172 | |
| SSM3J115TU | High-power transistor for demanding application | Toshiba | 7,562 | |
| RN1303 | USM PLN(LF) Pre-Biased Bipolar Transistors | Toshiba | 8,586 | |
| 2SD2656 | Product description | ROHM Semiconductor | 7,335 | |
| BAV70W | High speed switching diode ideal for power conversion and control circuit | Diodes Incorporated | 8,274 | |
| BC807-25W | Trans GP BJT PNP 45V 0.5A 3-Pin SOT-323 T/R | Yangjie Technology | 8,232 | |
| BC847AW | NPN, 45V, 0.1A, SOT323 | Yangjie Technology | 4,529 | |
| BC846AW | NPN, 65V, 0.1A, SOT323 | Yangjie Technology | 7,419 | |
| BC846BW | Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SOT-323 T/R | Yangjie Technology | 7,333 | |
| BC856BW | PNP, 65V, 0.1A, SOT323 | Yangjie Technology | 6,767 | |
| BC857BW | PNP, 45V, 0.1A, SOT323 | Yangjie Technology | 8,356 | |
| DMN3065LW-7 | Diodes Inc DMN3065LW-7 N-channel MOSFET Transistor, 4 A, 30 V, 3-Pin SOT-323 | Diodes Incorporated | 5,469 | |
| RN2304 | Three-Pin Transistor for Small Signal Amplification | Toshiba | 9,471 | |
| DMN5L06WK-7 | Diodes Inc DMN5L06WK-7 N-channel MOSFET Transistor, 0.3 A, 50 V, 3-Pin SOT-323 | Diodes Incorporated | 7,700 | |
| DDTC144EUA-7-F | 00 mA current rating, 50 V voltage rating, 47 kΩ resistance | Diodes Incorporated | 6,493 | |
| SDMG0340LS-7-F | SOT-323 Surface Mount SDM Series Schottky Barrier Diode with 30 mA, 40 V | Diodes Incorporated | 5,828 | |
| BAS70-05W,115 | Dual BAS70-05W Schottky Barrier Diode | Nexperia | 8,788 | |
| BSS816NW | The BSSW transistor provides reliable performance in a wide range of electronic systems and device | Infineon | 6,483 | |
| DTC114TUA | High-quality digital transistors for precise control of small signals | Yangjie Technology | 6,283 | |
| SN7002W | Automotive-grade N-channel MOSFET capable of handling up to 60 volts and 0 | Infineon Technologies AG | 5,468 | |
| ESD1P0RFW | Automotive ESD Suppressor Diode Array Uni-Dir 70V 15Vc 3-Pin SOT-323 T/R | INFINEON | 4,547 | |
| DTC113ZUA | Precise engineering and quality control ensure optimal performance in electronic designs | Yangjie Technology | 4,959 | |
| BC859CW | Compact SOT-package ideal for space-restricted design | Diotec Semiconductor | 3,725 | |
| SSM3J16FU | High-performance automotive grade MOSFET for reliable power control application | Toshiba | 9,487 | |
| BSS214NW | Miniature Field-Effect Transistor" | infineon | 7,084 | |
| 1SV314 | High Capacitance Ratio : C0.5V / C2.5V = 2.5 (Typ.) | TOSHIBA | 6,417 | |
| RYU002N05T306 | ROHM Semiconductor | ROHM | 5,311 | |
| BAS70-05WFILM | 70V Schottky diode designed for high frequency use | STMicroelectronics NV | 6,249 | |
| BC807W | The BC807W transistor is a PNP type device that can handle voltages up to 45V and currents up to 0.5A, housed in a SOT323 package | Nexperia | 4,769 | |
| BAS16WH6327XTSA1 | AF digital transistor optimized for power switching in various electronic circuits | Infineon Technologies | 5,747 | |
| BC807-25LWX | Trans GP BJT PNP 45V 0.5A 200mW Automotive AEC-Q101 3-Pin SC-70 T/R | Nexperia | 5,962 | |
| MSQA6V1W5T2G | ROHS Compliant Electrostatic and Surge Protection | onsemi | 6,382 | |
| 2N7002KW_R1_00001 | Robust and efficient N-channel MOSFET with ESD protectio | Panjit | 6,187 | |
| BSS138W | Trans MOSFET N-CH 50V 0.21A 3-Pin SC-70 T/R | Infineon | 3,719 |