SC-70
(303)
The SC-70 (Small Outline Package) offers a compact, high-reliability packaging solution for integrated circuits in advanced electronic systems. Designed for thermal efficiency and minimal footprint, this configuration is ideal for space-constrained applications across various industries including telecommunications, automotive, and consumer electronics.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| BC847BW,115 | Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R | Nexperia Usa Inc. | 5,065 | |
| NL17SZ08DFT2G | Packaged in SC-70 with 5 Pins | Onsemi | 9,848 | |
| SN74LVC1G97DCKR | ROHS-compliant single-gate IC with a wide voltage range of 1.65V to 5.5V, housed in a compact SOT-363-6 package | TI | 6,284 | |
| 1PS302,115 | General Purpose Diodes | Nexperia Usa Inc. | 8,368 | |
| 2SA1577T106R | 5A TRANS PNP 32V UMT3 | Rohm Semiconductor | 8,337 | |
| 2SB1218A | General Purpose Transistors | Panasonic Electronic Components | 5,042 | |
| BAT6804WH6327XTSA1 | SOT-323-packaged Schottky diode rated for 8V and 0.13A, delivered on tape (not on a reel) | Infineon Technologies | 7,056 | |
| BC847BW,135 | Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R | Nexperia USA Inc. | 8,787 | |
| BFU520WX | Low current, high power NPN bipolar transistor for high frequency applications | NXP Semiconductors | 5,699 | |
| BSS209PW | Power Supply Switching Component | Infineon Technologies | 8,765 | |
| BSS223PW | High-Quality, Compact Transistor for Low-Power Circuits | Infineon Technologies | 8,256 | |
| DESD1P0RFW-7 | Diode array with ESD protection and low capacitance | Diodes Incorporated | 7,695 | |
| DF3A6.8FUT1G | ESD Suppressor TVS Uni-Dir 5V 3-Pin SC-70 T/R | onsemi | 8,591 | |
| DMP2110UW-7 | 0 V, 100 mOhm, 0.65 mW | Diodes Incorporated | 6,042 | |
| DMP2240UW-7 | Diodes Inc DMP2240UW-7 P-channel MOSFET Transistor, 1.5 A, -20 V, 3-Pin SOT-323 | Diodes Incorporated | 5,749 | |
| DMP32D4SW-7 | SMD transistor with 3 pins and tape/reel packaging | Diodes Incorporated | 5,711 | |
| DTC323TUT106 | Digital Transistors DTC323TUT106 SOT-323-3 ROHS | Rohm Semiconductor | 7,282 | |
| HSMP-482B-BLKG | high speed microwave PIN diodes with 50V VBR and 1 pF capacitance | Broadcom Limited | 9,240 | |
| HSMS-270C-TR1G | TVS Diode Silicon Unidirectional 2 Element | Broadcom Limited | 7,613 | |
| HSMS-282C-TR1G | free, silicon, C Band | Broadcom Limited | 5,503 | |
| HSMS-285C-BLKG | Diode with Schottky barrier technology | Broadcom Limited | 5,305 | |
| M1MA142WKT1G | Rectifier Diode Small Signal Switching 80V 0.15A 3ns 3-Pin SC-70 T/R | onsemi | 7,875 | |
| MASW-007221-TR3000 | SPDT RF switch with frequency range from 0MHz to 3000MHz and maximum insertion loss of 0.8dB in SOT-363, SC-88, and SC-70 packages with 6 pins | Macom | 3,778 | |
| MASWSS0115TR-3000 | Low-loss, high-speed switch ideal for wireless designs | MACOM Technology Solutions | 7,284 | |
| MMST5551-7-F | NPN Bipolar Junction Transistor for General Purpose Applications, 160V, 0.2A, SOT-323 Package | Diodes Incorporated | 7,100 | |
| MUN5215T1G | Small Signal Bipolar Transistor, 0.1A Collector Current, 50V Collector-Base Breakdown Voltage, NPN Type Silicon, Single Element | onsemi | 5,336 | |
| NC7ST32P5X | Small SC-70 Package | onsemi | 7,874 | |
| NC7SV02P5X | The NC7SV02P5X is a NOR gate with two inputs, built using CMOS technology and included in the AUP/ULP/V series, packaged in a PDSO5 format | onsemi | 8,619 | |
| NL17SZ86DFT2G | XOR Logic Gates with 1.65-5.5V Power Supply | onsemi | 8,336 | |
| NSVBC817-40WT1G | ON Semiconductor’s BC817-40W is a NPN Transistor designed for General Purpose applications and comes in the SC-70/SOT-323 package | onsemi | 5,473 | |
| NSVMSD42WT1G | High Voltage NPN Bipolar Transistor (NSVMSD42WT1G) | onsemi | 7,997 | |
| NUP2125WTT1G | ESD Suppressor TVS Bi-Dir 24V 3-Pin SC-70 T/R | onsemi | 7,813 | |
| PE42421SCAA-Z | Microwave Switch | Psemi | 5,409 | |
| PE4259-63 | Compact and efficient design ensures stable operation and minimized power consumption | Psemi | 5,467 | |
| PESD2IVN-UX | Electrostatic Discharge Protection Device, 18KV TVS Diode, SOT-323 Package with 3 Pins, Tape and Reel | Nexperia USA Inc. | 9,474 | |
| PMF280UN,115 | Power MOSFET on tape | NXP USA Inc. | 8,326 | |
| PMST2222A,115 | Trans GP BJT NPN 40V 0.6A 200mW Automotive AEC-Q101 3-Pin SC-70 T/R | Nexperia Usa Inc. | 7,094 | |
| RHU002N06FRAT106 | Product Code RHU002N06FRAT106 | Rohm Semiconductor | 8,642 | |
| RJU003N03FRAT106 | N-channel MOSFET suitable for 2.5V Gate Voltage (AEC-Q101 Compliant)" | Rohm Semiconductor | 5,450 | |
| RSB27F2FHT106 | 200mW Power Dissipation | Rohm Semiconductor | 7,430 | |
| RSB27F2T106 | Automotive Grade Dual Zener Diode with Bidirectional Protection, 27V Voltage Rating, UMD Package with 3 Pins, 10% Tolerance, 200mW Power Handling | Rohm Semiconductor | 5,693 | |
| SBAW56WT1G | Diode Small Signal Switching 0.2A Automotive AEC-Q101 3-Pin SC-70 T/R | onsemi | 7,655 | |
| SI1302DL-T1-E3 | SI1302DL-T1-E3, N-channel MOSFET Transistor 0.6 A 30 V, 3-Pin SOT-323 | Siliconix | 7,635 | |
| SMMBTA06WT1G | AEC-Q101 compliant NPN Bipolar Junction Transistor (BJT) engineered for Automotive use, featuring an 80V Voltage Rating, 0 | onsemi | 6,391 | |
| SMUN5213T1G | Trans Digital BJT NPN 50V 100mA 310mW Automotive AEC-Q101 3-Pin SC-70 T/R | onsemi | 7,411 | |
| SP1002-01JTG | 2-Element Transient Voltage Suppressor Diode featuring 6V Reverse Working Voltage | Littelfuse Inc. | 7,743 | |
| SSM3J15FU,LF | Small-signal MOSFET for high-speed switching | Toshiba Semiconductor and Storage | 9,427 | |
| SVC704-TL-E | Varactor Diode Single 16V 26pF 3-Pin MCPH T/R | onsemi | 9,079 | |
| SZMMBZ27VCWT1G | SZMMBZ27VCWT1G product description | onsemi | 9,578 | |
| SZNUP2128WTT1G | Ideal for preventing electrostatic discharge damage | onsemi | 6,091 |