PG-TDSON-8
(45)
The PG-TDSON-8 (Power Ground Thin Dual Flat No-Lead Package) provides a compact, high-reliability packaging solution for integrated circuits in advanced electronic systems. Engineered for optimal thermal performance and a small footprint, this 8-lead configuration is well-suited for space-constrained applications across telecommunications, automotive, and consumer electronics sectors.
Part Number | Description | Manufacturers | Inventory | Add To Bom |
---|---|---|---|---|
BSC030N08NS5ATMA1 | Tape and Reel Packaging for Automated Assembly | Infineon Technologies | 9,773 | |
BSC026N08NS5ATMA1 | Part number BSC026N08NS5ATMA1 | Infineon | 5,022 | |
BSC110N15NS5ATMA1 | TDSON-8 MOSFET, N-type, 150V, 76A, with low on-resistance | Infineon | 5,189 | |
IRFH7545TRPBF | N-channel MOSFET IRFH7545TRPBF 60V 85A PQFN | Infineon | 5,472 | |
BSC066N06NSATMA1 | Product BSC066N06NSATMA1 is a N-channel MOSFET capable of handling up to 60 volts and 15 amps | Infineon Technologies | 5,693 | |
IAUC120N04S6L009 | MOSFETs TDSON-8(6.2x5.2) ROHS | infineon | 6,617 | |
IAUC100N04S6N028 | Automotive Trans MOSFET N-CH 40V 100A with AEC-Q101 Certification | infineon | 8,858 | |
IAUC24N10S5L300 | Field-Effect Transistor for Power Circuits | infineon | 6,758 | |
IAUC120N04S6N010 | MOSFET with 20V to 40V capability | infineon | 6,225 | |
IAUC60N04S6L039 | Field-effect transistor with 20V and 40V voltage specifications | infineon | 7,971 | |
IAUC100N04S6N015 | High-power MOSFET, | infineon | 8,956 | |
IAUC90N10S5N062 | 75V 120V MOSFET IAUC90N10S5N062 MOSFET | infineon | 6,743 | |
IAUC80N04S6N036 | MOSFET IAUC80N04S6N036 is designed for use in electronics with a voltage requirement between 20V and 40V | infineon | 6,256 | |
IAUC80N04S6L032 | ROHS compliant for environmental friendliness | infineon | 6,448 | |
IAUC41N06S5L100 | Product IAUC41N06S5L100 is an N-channel transistor designed for surface-mount applications | infineon | 9,263 | |
IAUC120N06S5N017 | Utilize these components effectively in various applications | infineon | 9,015 | |
IAUC100N04S6N022 | Dual voltage MOSFET | infineon | 9,455 | |
IAUC100N04S6L025 | Metal-oxide-semiconductor field-effect transistor with a maximum voltage rating of 20V and 40V | infineon | 5,171 | |
IAUC100N04S6L020 | MOSFETs ROHS TDSON-8(6.2x5.2) IAUC100N04S6L020 | infineon | 8,550 | |
BSC014N04LSATMA1 | MOSFET N-channel 40V 100A TDSON-8 FL OptiMOS | Infineon | 8,373 | |
BSC016N06NSATMA1 | 1.6 mOhm N-Channel Power Mosfet with 71 nC gate charge in TDSON-8 FL package | Infineon | 6,717 | |
BSC028N06NSTATMA1 | 8-Pin TDSON EP T/R Trans MOSFET N-Channel 60V 24A | Infineon | 5,547 | |
BSC039N06NSATMA1 | Advanced Single N-Channel Power Mosfet with 60V Voltage Rating | Infineon | 9,960 | |
BSC070N10NS3GATMA1 | Transistor MOSFET N-channel for automotive applications with a power rating of 100V and 90A | Infineon Technologies | 6,891 | |
BSC190N15NS3GATMA1 | 150 V 19 mOhm 23 nC Single N-Channel OptiMOS Power Mosfet TDSON-8 | Infineon | 5,268 | |
BSC320N20NS3GATMA1 | Product BSC320N20NS3GATMA1 is an INFINEON MOSFET with N-channel type, 200V voltage rating, 36A current rating, and TDSON-8 package | Infineon | 8,514 | |
IRFH5020TRPBF | Low on-resistance of 55mOhms | Infineon | 8,168 | |
IRFH5406TRPBF | Bulk-packaged N-channel 60V 11A MOSFET in tape | Infineon | 8,672 | |
IAUC120N06S5L032 | channel enhancement mode | infineon | 7,741 | |
IAUC60N04S6N031H | Power Field-Effect Transistor | Infineon Technologies AG | 5,666 | |
IAUC45N04S6N070H | Field-Effect Transistor for power applications | Infineon Technologies AG | 5,745 | |
IAUC60N04S6L030H | N-Channel MOSFET with 40V voltage rating and 60A current rating in TDSON-8 package | Infineon | 8,119 | |
IAUC60N04S6N050H | Power Transistor | Infineon | 5,928 | |
IAUC60N04S6N044 | TDSON-8-FL(6x5) MOSFETs compliant with ROHS regulations | infineon | 9,256 | |
IAUC100N04S6L014 | IAUC100N04S6L014 MOSFET for 20V-40V applications | infineon | 9,977 | |
IPLK70R2K0P7ATMA1 | Efficiently control high-voltage loads with this robust power MOSFE | Infineon Technologies | 6,896 | |
BSC016N03MSGATMA1 | High-performance N-Channel MOSFET Transistor designed for 30 Volts and 28 Amps, presented in an 8-Pin TDSON EP package on Tape and Reel | Infineon | 2,365 | |
BSC018NE2LSATMA1 | Transistor MOSFET N-channel with 25V voltage and 29A current in a 8-pin TDSON EP package for Tape and Reel packaging | Infineon | 4,059 | |
BSC0804LSATMA1 | Product BSC0804LSATMA1 is a MOSFET with N-channel configuration, capable of handling 100V and 40A, featuring a TDSON package | Infineon | 9,922 | |
ISC16DP15LMATMA1 | Trans MOSFET P-CH 150V 2.5A 8-Pin TDSON EP T/R | Infineon | 8,468 | |
IPLK70R750P7ATMA1 | Robust design and high-voltage handling make this device ideal for harsh environment | Infineon | 8,145 | |
IRFH7110TRPBF | channel 100V 11A 8-pin QFN EP Transistor MOSFET | Infineon | 2,872 | |
ISC0804NLSATMA1 | Advanced surface mount transistor for demanding applications requiring high current and voltag | Infineon | 9,530 | |
ISC800P06LMATMA1 | Trans MOSFET P-CH 60V 19.6A 8-Pin TDSON EP T/R | Infineon Technologies | 8,701 | |
ISC750P10LMATMA1 | Trans MOSFET P-CH 100V 3.8A 8-Pin TDSON EP T/R | Infineon Technologies | 5,195 |