TO-263-3
(317)
The D2PAK-3 (TO-263-3) provides a robust, high-power packaging solution for integrated circuits in demanding electronic systems. With its 3-lead configuration, this package offers efficient thermal management and reliability, making it ideal for high-power applications in industries such as automotive, industrial, and power management.
Part Number | Description | Manufacturers | Inventory | Add To Bom |
---|---|---|---|---|
STB60NF06T4 | High-performance 60NF06T4 MOSFET for power applications | STMicroelectronics NV | 9,620 | |
HGT1S20N60C3S9A | The HGT1S20N60C3S9A is a high-performance N-Channel IGBT, capable of handling 45A at 600V | Onsemi | 6,477 | |
LM317BD2T | LM317BD2T - Linear Voltage Regulators for Adjusting Voltage Levels, 1.5A Output, 1.2-37V Operation | Onsemi | 9,612 | |
SUM45N25-58-E3 | 250V 45A Power Transistor | Siliconix | 5,552 | |
IPB80N06S2L-05 | Infineon IPB80N06S2L-05 N-channel MOSFET Transistor, 80 A, 55 V, 3-Pin TO-263 | Infineon Technologies | 5,947 | |
DPG60C300PC | Rectifier Diode Switching 300V 30A 35ns 3-Pin(2+Tab) D2PAK T/R | Ixys Integrated Circuits Division | 8,186 | |
IPB60R299CP | Detailed Information: This is the product IPB60R299CP | Infineon Technologies | 9,836 | |
LMS1585ACS-ADJ | A low dropout fast response regulator | Texas Instruments | 5,186 | |
SGB15N60HS | IGBT Transistors for High-Power Applications | Infineon | 9,473 | |
STB15810 | The STB15810 MOSFET is a reliable choice for high-power applications | STMicroelectronics NV | 9,958 | |
SIHB12N60E-GE3 | This MOSFET, with a null threshold voltage of 4V at 250uA, ensures precise control and efficient performance in various applications | Vishay | 7,554 | |
SUM60N10-17-E3 | 50 watt electronic component | Vishay | 6,485 | |
STB47N60DM6AG | Ideal for power switching applications | STMicroelectronics NV | 9,039 | |
LD1086D2T33TR | Three-Pin D2PAK Package LDO Regulator | STMicroelectronics NV | 8,604 | |
MBRB4030T4G | Schottky rectifier diode MBRB4030T4G: This product boasts a 30V voltage rating and a 40A current capacity | onsemi | 9,453 | |
MBRB2060CTG | 0V voltage rating | onsemi | 9,804 | |
MBRB1045T4G | D2PAK Schottky Rectifier Diode with 45V Voltage Rating, 10A Current Capacity, 3-Pin (2+Tab) Configuration, Shipped on Tape and Reel | onsemi | 7,220 | |
HUF75645S3ST | This MOSFET transistor is suitable for switching applications with its N-channel design and a compact D2PAK package | onsemi | 7,708 | |
HUF75639S3ST | Power Mosfet with N-Channel 100V rating and 0.025 Ohm resistance | onsemi | 7,152 | |
MC7805CD2TG | Voltage Regulator | onsemi | 8,608 | |
LM337D2TR4G | Negative Output Voltage range from -1.2V to -37V | onsemi | 7,854 | |
MC7812CD2TG | 3-pin (2+tab) D2PAK regulator delivering 12V with 2.2A output | onsemi | 6,827 | |
HGT1S10N120BNST | Insulated Gate Bipolar Transistor, 1200V, Non-Punch Through | onsemi | 8,703 | |
MURB1620CTT4G | 200V Maximum Voltage Rating | onsemi | 6,956 | |
MBRB40250TT4G | Switch-mode Rectifier | onsemi | 6,086 | |
LM337BD2TG | Linear regulator with adjustable output voltage from -1.25V to -37V | onsemi | 7,329 | |
FQB22P10TM | QFET P-Channel transistor with 100V capacity | onsemi | 5,733 | |
NCP565D2T33R4G | 1.5 A LDO Regulator with High PSRR and Fast Transient Response | onsemi | 8,716 | |
FDB33N25TM | UniFETTM N-Channel Power MOSFET rated for 250 volts, 33 amps, and with an on-state resistance of 94 milliohms, housed in a D2PAK package | onsemi | 5,803 | |
NCV8674DS120G | Low Dropout Linear Voltage Regulator | onsemi | 6,840 | |
IRFS4115TRLPBF | RoHS compliant TO-263-2 package | Infineon Technologies | 5,408 | |
IPB027N10N5ATMA1 | High-current N-channel MOSFET with 120A maximum drain current, 100V voltage rating, and 0.0027ohm on-resistance | Infineon Technologies | 6,031 | |
IRF6215STRLPBF | MOSFET transistor designed for P-Channel operation | Infineon Technologies | 8,767 | |
IPB60R160P6ATMA1 | Power MOSFET designed for high voltage and current applications | Infineon Technologies | 7,004 | |
IPB027N10N3GATMA1 | Part number IPB027N10N3GATMA1 | Infineon Technologies | 6,114 | |
IRF9530NSTRLPBF | P-Channel Silicon Transistor, 100V, 14A, D2PAK Package | Infineon Technologies | 6,553 | |
2SK4177-DL-1E | N-Channel Power MOSFET with 1500V rating and 2A current capability | Onsemi | 6,886 | |
BUB323ZG | NPN Darlington Bipolar Power Transistor (BUB323ZG) | Onsemi | 6,446 | |
FCB11N60TM | This MOSFET, FCB11N60TM, operates within RoHS compliance standards, ensuring its environmental friendliness | Onsemi | 8,089 | |
FCB36N60NTM | Product description for FCB36N60NTM | Onsemi | 7,222 | |
FDB14N30TM | 300 Volt N-Channel UniFETTM Power MOSFET with 14 Ampere current rating and 290 milliohm on-resistance, packaged in D2PAK, available in 800-unit reel | Onsemi | 6,529 | |
FDB52N20TM | D2PAK transistor with N-MOSFET technology, unipolar operation, and a power rating of 357W | Onsemi | 9,744 | |
FQB19N20LTM | This Power MOSFET is an N-Channel device suitable for logic level applications, incorporating QFET® technology for enhanced performance | Onsemi | 7,718 | |
FQB27P06TM | Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm | Onsemi | 6,310 | |
FQB34P10TM | With a voltage rating of -100V and a current rating of -33 | Onsemi | 7,824 | |
FQB55N10TM | Three-pin component with two additional tabs, designed in D2PAK package | Onsemi | 7,196 | |
FQB5N90TM | 3 ohm resistance, housed in a D2PAK package | Onsemi | 6,176 | |
HUF75545S3ST | The HUF75545S3ST MOSFET is RoHS compliant and comes in a TO-263AB package with null voltage of 10V and 4V at 250uA | Onsemi | 6,265 | |
IRF640SPBF | High-power N-channel MOSFET capable of handling 18A current at 200V voltage | Siliconix | 4,443 | |
IRF740SPBF | VISHAY - IRF740SPBF. - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-263 (D2PAK), Surface Mount | Siliconix | 5,266 |