DMP10H4D2S-7 vs DMP10H400SE-13

Specifications
DMP10H4D2S-7
DMP10H400SE-13
Part Number

DMP10H4D2S-7

DMP10H400SE-13

Brand Diodes Incorporated Diodes Incorporated
Description The DMP10H4D2S-7 chip inductor is a compact component, measuring 0805, with an inductance of 0.39uH, featuring a tolerance of +/-10% Description of product DMP10H400SE-13 MOSFET P -100V -6A SOT223
Series DMP10 DMP10
Technology Si MOSFET (Metal Oxide)
Package / Case SOT-23-3 TO-261-4, TO-261AA
Product Category MOSFET /
RoHS Details /
Mounting Style SMD/SMT /
Transistor Polarity P-Channel /
Number of Channels 1 Channel /
Vds - Drain-Source Breakdown Voltage 100 V /
Id - Continuous Drain Current 270 mA /
Rds On - Drain-Source Resistance 4.2 Ohms /
Vgs - Gate-Source Voltage - 20 V, + 20 V /
Vgs th - Gate-Source Threshold Voltage 1 V /
Qg - Gate Charge 1.8 nC /
Minimum Operating Temperature - 55 C /
Maximum Operating Temperature + 150 C /
Pd - Power Dissipation 440 mW /
Channel Mode Enhancement /
Configuration Single /
Fall Time 4.9 ns /
Height 0.975 mm /
Length 2.9 mm /
Product Type MOSFET /
Rise Time 2.6 ns /
Factory Pack Quantity 3000 /
Subcategory MOSFETs /
Transistor Type 1 P-Channel /
Typical Turn-Off Delay Time 8.4 ns /
Typical Turn-On Delay Time 3.3 ns /
Width 1.3 mm /
Unit Weight 0.000282 oz /
Product Status / Active
FET Type / P-Channel
Drain to Source Voltage (Vdss) / 100 V
Current - Continuous Drain (Id) @ 25°C / 2.3A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) / 4.5V, 10V
Rds On (Max) @ Id, Vgs / 250mOhm @ 5A, 10V
Vgs(th) (Max) @ Id / 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs / 17.5 nC @ 10 V
Vgs (Max) / ±20V
Input Capacitance (Ciss) (Max) @ Vds / 1239 pF @ 25 V
Power Dissipation (Max) / 2W (Ta), 13.7W (Tc)
Operating Temperature / -55°C ~ 150°C (TJ)
Mounting Type / Surface Mount
Supplier Device Package / SOT-223-3
Base Product Number / DMP10
DMP2165UW-7

DMP2165UW-7

Established French Electronics Provider
DMP6180SK3-13

DMP6180SK3-13

60V P-channel MOSFET
DMP2160UW-7

DMP2160UW-7

Small Signal Field-Effect Transistor
DMP4013LFG-7

DMP4013LFG-7

DIODES INC. - DMP4013LFG-7. - MOSFET, AEC-Q101, P-CH, -10.3A, -40V
DMP6185SE-13

DMP6185SE-13

Semiconductor device with BVDSS specification of 41V-60V
DMP4047LFDE-7

DMP4047LFDE-7

Product DMP4047LFDE-7 is a P Channel MOSFET with a voltage rating of 40V and a current rating of 3.3A
DMP1046UFDB-7

DMP1046UFDB-7

P-Channel MOSFET with 12V voltage rating and 3.8A current capability
DMP2008UFG-7

DMP2008UFG-7

The description of DMP2008UFG-7 highlights its characteristics as a P-channel PowerDI3333-8 MOSFET
DMP2022LSS-13

DMP2022LSS-13

P-Channel 20V 10A 8-Pin SOP Transistor for MOSFET Applications
DMP210DUFB4-7

DMP210DUFB4-7

X2-DFN1006-3 ROHS
DMP2200UDW-7

DMP2200UDW-7

Dual Mosfet, P-Ch, 20V, 0.9A, SOT-363
DMP2240UDM-7

DMP2240UDM-7

Power dissipation of 600mW at 1V, 250uA
DMP3008SFG-7

DMP3008SFG-7

DMP3008SFG-7 for High Power Applications
DMP3010LK3-13

DMP3010LK3-13

DMP3010LK3-13 is a MOSFET boasting a BVDSS (Breakdown Voltage Drain to Source) range of 25V-30V-30V
DMP3037LSS-13

DMP3037LSS-13

Product DMP3037LSS-13, also known as 'P-CH 30V 5
DMP3050LVT-7

DMP3050LVT-7

Power dissipation of 1.8W

Hot Comparison

CRCW25124K70JNEG vs CRCW2512470RJNEG CRCW2512470RJNEG vs CRCW25121R00FKEGHP CRCW25124K70JNEG vs CRCW25121R00FKEG CRCW2512470RJNEG vs CRCW25121R00JNEG CRCW2512470RJNEG vs CRCW2512100RJNEG CRCW25124K70JNEG vs CRCW25121R00JNEG CRCW25124K70JNEG vs CRCW25121K00JNEG CRCW25124K70JNEG vs CRCW25121R00FKEGHP CRCW25124K70JNEG vs CRCW251210R0JNEGHP CRCW25124K70JNEG vs CRCW2512100RJNEG