DMP1022UFDE-7 vs DMP10H400SE-13

Specifications
Part Number

DMP1022UFDE-7

DMP10H400SE-13

Brand Diodes Incorporated Diodes Incorporated
Description Small Signal Field-Effect Transistor Description of product DMP10H400SE-13 MOSFET P -100V -6A SOT223
Series DMP10 DMP10
Technology Si MOSFET (Metal Oxide)
Package / Case U-DFN2020-E-6 TO-261-4, TO-261AA
Product Category MOSFET /
RoHS Details /
Mounting Style SMD/SMT /
Transistor Polarity P-Channel /
Number of Channels 1 Channel /
Vds - Drain-Source Breakdown Voltage 12 V /
Id - Continuous Drain Current 9.1 A /
Rds On - Drain-Source Resistance 16 mOhms /
Vgs - Gate-Source Voltage - 8 V, + 8 V /
Vgs th - Gate-Source Threshold Voltage 350 mV /
Qg - Gate Charge 28.4 nC /
Minimum Operating Temperature - 55 C /
Maximum Operating Temperature + 150 C /
Pd - Power Dissipation 2.03 W /
Channel Mode Enhancement /
Configuration Single /
Fall Time 93 ns /
Product Type MOSFET /
Rise Time 28 ns /
Factory Pack Quantity 3000 /
Subcategory MOSFETs /
Transistor Type 1 P-Channel /
Typical Turn-Off Delay Time 117 ns /
Typical Turn-On Delay Time 20 ns /
Unit Weight 0.002293 oz /
Product Status / Active
FET Type / P-Channel
Drain to Source Voltage (Vdss) / 100 V
Current - Continuous Drain (Id) @ 25°C / 2.3A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) / 4.5V, 10V
Rds On (Max) @ Id, Vgs / 250mOhm @ 5A, 10V
Vgs(th) (Max) @ Id / 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs / 17.5 nC @ 10 V
Vgs (Max) / ±20V
Input Capacitance (Ciss) (Max) @ Vds / 1239 pF @ 25 V
Power Dissipation (Max) / 2W (Ta), 13.7W (Tc)
Operating Temperature / -55°C ~ 150°C (TJ)
Mounting Type / Surface Mount
Supplier Device Package / SOT-223-3
Base Product Number / DMP10

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