• ZVN2106A E-Line
ZVN2106A E-Line

ZVN2106A

channel MOSFET with a voltage rating of 60V, current rating of 0.45A, and power dissipation of 0.7W, packaged in TO92

Quantity Unit Price(USD) Ext. Price
1 $0.443 $0.44
10 $0.356 $3.56
30 $0.319 $9.57
100 $0.272 $27.20
500 $0.252 $126.00
1000 $0.240 $240.00

Inventory:6,168

*The price is for reference only.
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Overview of ZVN2106A

The ZVN2106A is a enhancement-mode vertical DMOS FET transistor, designed for use in low power applications such as battery management, power management, and low voltage switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the ZVN2106A FET transistor for a more visual representation.

Key Features

  • Enhancement-Mode FET: The ZVN2106A is an enhancement-mode vertical DMOS FET transistor, providing low on-resistance and high switching speed.
  • Low Power Applications: Designed for use in low power applications, this transistor is suitable for battery-powered devices and other low voltage circuits.
  • High Switching Speed: With its vertical DMOS structure, the ZVN2106A offers high switching speed, making it suitable for fast switching applications.

Note: For detailed technical specifications, please refer to the ZVN2106A datasheet.

Application

  • Battery Management: Ideal for battery management circuits where low power consumption is critical.
  • Power Management: Suitable for use in power management systems requiring efficient switching capabilities.
  • Low Voltage Switching Circuits: Used in various low voltage switching circuits for control and signal processing applications.

Functionality

The ZVN2106A enhancement-mode vertical DMOS FET transistor provides efficient switching and low on-resistance, making it suitable for a wide range of low power applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin (G) to control the switching behavior of the transistor.
  • Drain-Source Connection: Connect the load between the drain (D) and source (S) pins to utilize the switching capabilities of the transistor.

Frequently Asked Questions

Q: Can the ZVN2106A be used in high temperature environments?
A: The ZVN2106A has a maximum operating temperature range specified in the datasheet, ensuring reliable operation within certain temperature limits.

Equivalent

For similar functionalities, consider these alternatives to the ZVN2106A:

  • IRF530N: A similar enhancement-mode FET transistor offering comparable performance characteristics.
  • BS170: This is a small signal N-channel MOSFET transistor suitable for low power applications.
  • 2N7002: A small signal N-channel MOSFET transistor with low threshold voltage and high switching speed.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-92-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 450 mA Rds On - Drain-Source Resistance 2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 700 mW Channel Mode Enhancement
Series ZVN2106 Brand Diodes Incorporated
Configuration Single Forward Transconductance - Min 300 mS
Height 4.01 mm Length 4.77 mm
Product MOSFET Small Signals Product Type MOSFET
Factory Pack Quantity 4000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type FET
Width 2.41 mm Unit Weight 0.016000 oz

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