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ZTX453

Bipolar Transistors - BJT NPN Medium Power

Inventory:5,149

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  • Part Number : ZTX453

  • Package/Case : TO-92-3

  • Brands : DIODES

  • Components Categories : Bipolar (BJT)Single Bipolar Transistors

  • Datesheet : ZTX453 DataSheet (PDF)

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Overview of ZTX453

TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 700mV; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 1A; Current Ic hFE: 150mA; Device Marking: ZTX453; Gain Bandwidth ft Min: 150MHz; Hfe Min: 40; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V

Key Features

  • 100 Volt VCEO
  • 1 Amp continuous current
  • Ptot = 1 Watt
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer ZETEX PLC Package Description CYLINDRICAL, O-PBCY-W3
Reach Compliance Code not_compliant ECCN Code EAR99
HTS Code 8541.29.00.75 Collector Current-Max (IC) 1 A
Collector-Base Capacitance-Max 15 pF Collector-Emitter Voltage-Max 100 V
Configuration SINGLE DC Current Gain-Min (hFE) 10
JESD-30 Code O-PBCY-W3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 200 °C
Package Body Material PLASTIC/EPOXY Package Shape ROUND
Package Style CYLINDRICAL Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 1 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form WIRE Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 150 MHz
VCEsat-Max 0.7 V

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