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WAS300M12BM2

Discrete Semiconductor Modules BM2, 1200V, 300A SiCHalf-Bridge Module

Inventory:8,027

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Overview of WAS300M12BM2

Mosfet Array 1200V (1.2kV) 423A (Tc) 1.668kW (Tc) Chassis Mount Module

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Not For New Designs
Technology Silicon Carbide (SiC) Configuration 2 N-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 423A (Tc) Rds On (Max) @ Id, Vgs 5.3mOhm @ 300A, 20V
Vgs(th) (Max) @ Id 2.5V @ 15mA Gate Charge (Qg) (Max) @ Vgs 1025nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 19300pF @ 600V Power - Max 1.668kW (Tc)
Operating Temperature 150°C (TJ) Mounting Type Chassis Mount
Package / Case Module Supplier Device Package Module
Base Product Number WAS300

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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