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VN0104N3

MOSFET 40V 3Ohm

Inventory:5,942

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Overview of VN0104N3

Advanced DMOS TechnologyThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.Features❏ Free from secondary breakdown❏ Low power drive requirement❏ Ease of paralleling❏ Low CISS and fast switching speeds❏ Excellent thermal stability❏ Integral Source-Drain diode❏ High input impedance and high gain❏ Complementary N- and P-channel devicesApplications❏ Motor controls❏ Converters❏ Amplifiers❏ Switches❏ Power supply circuits❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

Key Features

  • ❏ Free from secondary breakdown
  • ❏ Low power drive requirement
  • ❏ Ease of paralleling
  • ❏ Low CISS and fast switching speeds
  • ❏ Excellent thermal stability
  • ❏ Integral Source-Drain diode
  • ❏ High input impedance and high gain
  • ❏ Complementary N- and P-channel devices

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
Ihs Manufacturer TELCOM SEMICONDUCTOR INC Reach Compliance Code
ECCN Code EAR99 Configuration Single
Drain Current-Max (Abs) (ID) 0.5 A FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

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    Parts Quality Guarantee: 365 days

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