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V20E510P

Varistors with 510V rating and 20mm size, featuring Epoxy UltraMOV technology

Inventory:7,739

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Overview of V20E510P

The V20E510P is a high-speed CMOS static RAM organized as 131,072 words by 8 bits. It provides high-performance storage and retrieval of data, making it suitable for use in various digital systems and microprocessor-based applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • A0-A16: Address Inputs
  • DQ0-DQ7: Data Input/Output
  • CE1, CE2: Chip Enable Inputs
  • OE: Output Enable
  • WE: Write Enable
  • Vcc: Positive Power Supply
  • GND: Power Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the V20E510P IC for a visual representation.

Key Features

  • High-Speed CMOS Technology: The V20E510P utilizes high-speed CMOS technology for rapid data access and transfer.
  • 131,072 x 8-Bit Organization: Offers a total storage capacity of 1,048,576 bits for efficient data storage and retrieval.
  • Low Power Consumption: Operates with low power requirements, suitable for energy-efficient applications.
  • Multiple Chip Enable Inputs: Includes two chip enable inputs for flexible control of the device.
  • Wide Operating Voltage Range: Compatible with a wide range of supply voltages, making it suitable for diverse digital systems.

Note: For detailed technical specifications, please refer to the V20E510P datasheet.

Application

  • Microprocessor Systems: Ideal for use in microprocessor-based systems for memory storage and data processing.
  • Embedded Systems: Suitable for embedded applications requiring high-speed and reliable data storage.
  • Data Buffering: Used for buffering and temporary storage of data in digital systems.

Functionality

The V20E510P is a high-speed CMOS static RAM designed to provide efficient and reliable storage of digital data. It offers rapid access and low-power operation, making it suitable for a wide range of applications.

Usage Guide

  • Power Supply: Connect Vcc (Pin) to the positive power supply and GND (Pin) to the power ground.
  • Data Input/Output: Utilize the DQ0-DQ7 pins for data input and output operations.
  • Control Inputs: Manage the chip enable (CE), output enable (OE), and write enable (WE) inputs for controlling data access and storage.

Frequently Asked Questions

Q: What is the access time of the V20E510P?
A: The V20E510P offers a fast access time, typically in the range of nanoseconds, ensuring quick retrieval of stored data.

Q: Can the V20E510P operate at extended temperature ranges?
A: Yes, the V20E510P is designed to operate at extended temperature ranges, making it suitable for industrial and automotive applications.

Equivalent

For similar functionalities, consider these alternatives to the V20E510P:

  • IS62WV1288BLL: This is a low-power CMOS SRAM with a similar organization and performance to the V20E510P, suitable for battery-operated devices.
  • AS6C1008-55PCN: A 128k x 8-bit low power CMOS static RAM with comparable features and functionality to the V20E510P.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

VMAX AC (V) 510 Max Rated DC Voltage 670
Surge Energy (WTM) (J) 325 Peak Pulse Current (ITM) 1xAmps (A) 10000
Peak Pulse Current (ITM) 2xAmps (A) 6500 VNDC MIN (V) 738
VNDC MAX (V) 902 Max Clamp Voltage (Vc) (V) 1355
Packaging Method BULK Clamp Polarity Bi-directional
Typ Capacitance (pF) 350

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    Returns for refund: within 90 days

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