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UMD9NFHATR

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

Inventory:5,980

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Overview of UMD9NFHATR

Bipolar Transistors - Pre-Biased PNP+NPN Digital transistor (with built-in resistors). Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillatto

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz
Power - Max 150mW Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Package / Case SOT-363-6 Supplier Device Package UMT6
Base Product Number UMD9 Manufacturer ROHM Semiconductor
Product Category Bipolar Transistors - Pre-Biased RoHS Details
Configuration Dual Transistor Polarity NPN, PNP
Typical Input Resistor 10 kOhms Typical Resistor Ratio 4.7
Mounting Style SMD/SMT DC Collector/Base Gain hfe Min 68
Maximum Operating Frequency 250 MHz Continuous Collector Current - 100 mA, 100 mA
Pd - Power Dissipation 150 mW Maximum Operating Temperature + 150 C
Brand ROHM Semiconductor Channel Mode Enhancement
Output Voltage 100 mV Product Type BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity 3000 Subcategory Transistors
Part # Aliases UMD9NFHA Unit Weight 0.000754 oz

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