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TK25A20D

Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220SIS

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Toshiba Product Category MOSFET
Technology Si Mounting Style Through Hole
Package / Case TO-220SIS-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 25 A Rds On - Drain-Source Resistance 70 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 60 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 45 W
Channel Mode Enhancement Tradename MOSVII
Series TK25A20D Brand Toshiba
Configuration Single Fall Time 66 ns
Product Type MOSFET Rise Time 73 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 360 ns Typical Turn-On Delay Time 120 ns
Unit Weight 0.068784 oz

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