• SUM110P06-07L-E3 D2PAK-3 (TO-263-3)
SUM110P06-07L-E3 D2PAK-3 (TO-263-3)

SUM110P06-07L-E3

Power Field-Effect Transistor, 110A I(D), 60V, 0.0069ohm

Quantity Unit Price(USD) Ext. Price
1 $2.439 $2.44
10 $2.321 $23.21
30 $2.250 $67.50
100 $2.179 $217.90
500 $1.907 $953.50
800 $1.892 $1,513.60

Inventory:6,008

*The price is for reference only.
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Overview of SUM110P06-07L-E3

The SUM110P06-07L-E3 is a Power MOSFET transistor designed for high power switching applications. It features a low on-resistance and high current capability, making it suitable for power management tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SUM110P06-07L-E3 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The SUM110P06-07L-E3 offers a low on-resistance for efficient power handling.
  • High Current Capability: This MOSFET has a high current rating, suitable for high power applications.
  • Fast Switching Speed: Provides quick switching characteristics for improved performance in switching applications.
  • High Power Dissipation: Capable of dissipating high power levels without overheating.
  • Robust Construction: Designed for reliable operation under high voltage and high current conditions.

Note: For detailed technical specifications, please refer to the SUM110P06-07L-E3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems requiring efficient power switching.
  • Motor Control: Suitable for motor control applications due to its high current handling capabilities.
  • Inverter Circuits: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The SUM110P06-07L-E3 MOSFET is designed for power switching applications where low on-resistance and high current handling are essential for efficient power management.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal source.
  • Drain Connection: Connect the drain (D) pin to the load or power input.
  • Source Connection: Connect the source (S) pin to the ground or common reference point.

Frequently Asked Questions

Q: Can the SUM110P06-07L-E3 be used for high-frequency switching applications?
A: Yes, the SUM110P06-07L-E3 MOSFET is suitable for high-frequency switching due to its fast switching speed.

Equivalent

For similar functionalities, consider these alternatives to the SUM110P06-07L-E3:

  • IRF3205: A power MOSFET with comparable specifications and performance characteristics.
  • FDP8878: This MOSFET offers similar power handling capabilities and switching speed to the SUM110P06-07L-E3.
  • APL5913: An alternative MOSFET option for power switching applications with high current requirements.

SUM110P06-07L-E3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 110 A
Rds On - Drain-Source Resistance 6.9 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 230 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 375 W Channel Mode Enhancement
Tradename TrenchFET Series SUM
Brand Vishay Semiconductors Configuration Single
Fall Time 50 ns Forward Transconductance - Min 20 S
Product Type MOSFET Rise Time 25 ns
Factory Pack Quantity 800 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 20 ns Part # Aliases SUM110P06-07L
Unit Weight 0.139332 oz

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