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ST2408HI

Bipolar Transistors - BJT NPN Hi-Volt Fast Sw

Inventory:9,028

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Overview of ST2408HI

Bipolar (BJT) Transistor NPN 600 V 12 A 55 W Through Hole ISOWATT-218

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer STMicroelectronics Product Category Bipolar Transistors - BJT
Mounting Style SMD/SMT Package / Case SOT-93
Transistor Polarity NPN Collector- Emitter Voltage VCEO Max 600 V
Collector- Base Voltage VCBO 1.5 kV Emitter- Base Voltage VEBO 7 V
Maximum DC Collector Current 12 A Pd - Power Dissipation 55 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Series ST2408 Brand STMicroelectronics
Continuous Collector Current 12 A DC Collector/Base Gain hfe Min 6
DC Current Gain hFE Max 9 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 30 Subcategory Transistors
Technology Si

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