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SSM3K119TU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Inventory:5,152

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Overview of SSM3K119TU

Power Management Switch ApplicationsHigh Speed Switching Applications• 1.8 V drive• Low ON-resistance: Ron = 134 mΩ (max) (@VGS = 1.8V) Ron = 90 mΩ (max) (@VGS = 2.5V) Ron = 74 mΩ (max) (@VGS = 4.0V)

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid SSM3K119TU Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code End Of Life
Ihs Manufacturer TOSHIBA CORP Pin Count 3
Reach Compliance Code ECCN Code EAR99
Samacsys Manufacturer Toshiba Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (Abs) (ID) 2.5 A
Drain Current-Max (ID) 2.5 A Drain-source On Resistance-Max 0.074 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-F3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 0.8 W
Qualification Status Not Qualified Surface Mount YES
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Element Material SILICON

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