SKM195GB066D
Trans IGBT Module N-CH 600V 265A 7-Pin Case D-61
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Part Number : SKM195GB066D
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Package/Case : DO-204
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Brands : Semikron
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Components Categories : IGBT Modules
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Datesheet : SKM195GB066D DataSheet (PDF)
Overview of SKM195GB066D
The SKM195GB066D is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for power electronics applications. With its advanced design and robust construction, this module offers efficient power switching and is suitable for various industrial applications where high-power handling capability is essential.
Pinout
Note: IGBT modules typically have multiple pins for power connections and control signals. Refer to the specific datasheet for precise details.
- Collector (C): Power supply connection.
- Emitter (E): Output or load connection.
- Gate (G): Input for control signal to switch the IGBT.
Circuit Diagram
Incorporate a circuit diagram that illustrates the connections and operation of the SKM195GB066D IGBT module for a more visual representation.
The circuit diagram above represents a typical application of the SKM195GB066D in a power electronics setup. External components may be added based on specific application requirements.
Key Features
- IGBT Technology: The SKM195GB066D utilizes IGBT technology, combining the advantages of both MOSFETs and bipolar transistors for efficient power switching.
- High Power Handling: With a high current and voltage rating, this IGBT module is capable of handling substantial power levels, making it suitable for high-power applications.
- Low Saturation Voltage: The module features a low saturation voltage, minimizing power losses during conduction and enhancing overall efficiency.
- Isolation: The module incorporates isolation between the control and power circuits, ensuring safe and reliable operation in various electrical systems.
Note: For detailed technical specifications, please refer to the SKM195GB066D datasheet.
Application
- Motor Drives: Used in motor drive systems for precise and efficient control of electric motors.
- Power Inverters: Applied in power inverters for converting DC power to AC power in renewable energy systems.
- Uninterruptible Power Supplies (UPS): Integrated into UPS systems to ensure continuous and reliable power supply during outages.
- Induction Heating: Utilized in induction heating systems for various industrial processes.
Functionality
The SKM195GB066D operates as an IGBT module, allowing for efficient switching of high-power loads in various applications. Its low saturation voltage and high power-handling capability make it a reliable choice for demanding power electronics systems.
Usage Guide
- Power Connections: Connect the collector (C) to the power supply and the emitter (E) to the load.
- Control Signal: Apply the control signal to the gate (G) for switching the IGBT on and off.
Equivalents
For similar functionalities, consider these alternatives to the SKM195GB066D:
FF150R12KS4: A high-power IGBT module with similar specifications.
IKW75N60T: An IGBT module suitable for high-power applications.
Frequently Asked Questions
Q: Can the SKM195GB066D be used in motor drive applications?
A: Yes, the SKM195GB066D is suitable for motor drive applications, providing efficient and precise control. Refer to the datasheet for specific details.
Q: What is the maximum operating voltage of the SKM195GB066D?
A: Consult the datasheet for detailed information on the maximum operating voltage under typical conditions.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | SEMIKRON INTERNATIONAL |
Part Package Code | DO-204 | Package Description | FLANGE MOUNT, R-XUFM-X7 |
Pin Count | 2 | Manufacturer Package Code | CASE D 61 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | Semikron | Case Connection | ISOLATED |
Collector Current-Max (IC) | 265 A | Collector-Emitter Voltage-Max | 600 V |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | Gate-Emitter Voltage-Max | 20 V |
JESD-30 Code | R-XUFM-X7 | JESD-609 Code | e3/e4 |
Number of Elements | 2 | Number of Terminals | 7 |
Operating Temperature-Max | 175 °C | Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Qualification Status | Not Qualified | Reference Standard | UL RECOGNIZED |
Surface Mount | NO | Terminal Finish | TIN/SILVER |
Terminal Form | UNSPECIFIED | Terminal Position | UPPER |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 569 ns |
Turn-on Time-Nom (ton) | 228 ns | VCEsat-Max | 1.9 V |
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