S29GL512P11FFI010

The S29GL512P11FFI010 is a 512Mb (64M x 8-bit) CMOS 3.0 Volt-only, uniform sector Flash memory device. It features a fast 110 ns random access time and a 100,000 program/erase cycle endurance, making it suitable for various data storage and code execution applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• A9: Address Input/Output 9
• CE#: Chip Enable Input
• OE#: Output Enable Input
• WE#: Write Enable Input
• RP#: Reset/Block Temporary Unprotect Input
• RY/BY#: Ready/Busy Output
• BYTE#: Byte Enable Input
• A[1:0]: Address Inputs/Outputs 0 and 1
• DQ[7:0]: Data Input/Output 0 to 7
• VCC: Positive Power Supply
• VSS: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the S29GL512P11FFI010 for a visual representation.

Key Features

• 512Mb Density: Offers a large memory capacity for storing data and program code.
• High-Speed Access: With a 110 ns random access time, data retrieval is efficient and quick.
• 3.0 Volt Operation: Works effectively at a 3.0V supply voltage.
• Endurance: Supports 100,000 program/erase cycles, ensuring long-term reliability.
• Uniform Sector Architecture: Facilitates easy and organized memory management.

Note: For detailed technical specifications, please refer to the S29GL512P11FFI010 datasheet.

Application

• Data Storage: Ideal for applications requiring high-capacity non-volatile memory.
• Code Execution: Suitable for storing program instructions in embedded systems.
• File System Management: Can be used for file system storage and management in various devices.

Functionality

The S29GL512P11FFI010 is a reliable Flash memory device designed for data storage and code execution applications. It offers high performance and endurance for consistent operation.

Usage Guide

• Device Interface: Connect CE#, OE#, WE#, and other control signals to the corresponding pins for device operation.
• Data Transfer: Use the data input/output pins DQ[7:0] for reading from and writing to the memory array.
• Memory Addressing: Apply the proper address inputs to access specific memory locations within the device.

Frequently Asked Questions

Q: What is the erase cycle endurance of the S29GL512P11FFI010?
A: The S29GL512P11FFI010 supports 100,000 program/erase cycles for reliable data storage operations.

Q: Does the S29GL512P11FFI010 require a separate voltage level for data input and output?
A: No, the S29GL512P11FFI010 operates effectively with a single 3.0V supply voltage, simplifying the overall system design.