S29GL512P10TFIR10

Featuring a 512-megabit capacity and a fast 10ns access time, the S29GL512P10TFIR10 NAND Flash memory chip from Cypress Semiconductor is designed for high-performance industrial applications. Its wide temperature range of -40°C to 85°C ensures reliable operation in varying environmental conditions, making it suitable for industrial use. The TSOP package with a thin body design allows for space-efficient integration in compact designs, while the 2.7V to 3.6V voltage range ensures compatibility with a variety of systems. With its impressive features and robust design, the S29GL512P10TFIR10 is a dependable choice for industrial memory applications

Key Features

• The features of S29GL512P10TFIR10 include:
• - 512 Mb capacity
• - 3
• 0-volt operating voltage
• - Manufactured using 90 nm MirrorBit technology
• - Input capacitance of 6-10 pF
• - Output capacitance of 10-12 pF

Application

• The S29GL512P10TFIR10 is a 512 Mb
• 3
• 0-volt-only
• page mode Flash memory device optimized for embedded designs that require large storage arrays and rich functionality
• It offers fast page access time and enhanced VersatileI/O™ control
• The device is part of the S29GL-P family manufactured using 90 nm MirrorBit technology