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RFD3055LESM9A

Trans MOSFET N-CH Si 60V 11A 3-Pin(2+Tab) DPAK T/R

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Overview of RFD3055LESM9A

Capable of handling high current loads with a continuous drain current rating of 11.9A, the RFD3055LESM9A is a robust and dependable component for demanding applications. Its maximum drain-source voltage rating of 60V ensures compatibility with various high voltage requirements, while the gate threshold voltage of 2.35V guarantees stable operation across different circuit configurations

Key Features

  • 11A, 60V
  • rDS(ON)= 0.107Ω
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature
     - TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”

Application

  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 107mOhm @ 8A, 5V Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 10 V Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number RFD3055

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