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RFD3055LE

Trans MOSFET N-CH Si 60V 11A 3-Pin(3+Tab) IPAK Tube

Inventory:7,933

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Quick Inquiry

Please submit RFQ for RFD3055LE or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of RFD3055LE

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49158.

Key Features

  • 11A, 60V
  • rDS(ON)= 0.107Ω
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature
     - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Application

  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid RFD3055LE Pbfree Code Yes
Part Life Cycle Code End Of Life Ihs Manufacturer ON SEMICONDUCTOR
Package Description IN-LINE, R-PSIP-T3 Manufacturer Package Code 369AR
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 12 Weeks Samacsys Manufacturer onsemi
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (Abs) (ID) 11 A
Drain Current-Max (ID) 11 A Drain-source On Resistance-Max 0.107 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style IN-LINE Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 38 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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