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RD3G03BATTL1

Trans MOSFET P-CH 40V 35A 3-Pin(2+Tab) DPAK T/R

Quantity Unit Price(USD) Ext. Price
1 $0.626 $0.63
200 $0.244 $48.80
500 $0.234 $117.00
1000 $0.230 $230.00

Inventory:5,993

*The price is for reference only.
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Overview of RD3G03BATTL1

P-Channel 40 V 35A (Tc) 56W (Tc) Surface Mount TO-252

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.1mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 20 V Power Dissipation (Max) 56W (Tc)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package TO-252 Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number RD3G03

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