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R6015ENX

ROHM - R6015ENX - MOSFET Transistor, N Channel, 15 A, 600 V, 0.26 ohm, 10 V, 4 V

Quantity Unit Price(USD) Ext. Price
1 $0.886 $0.89
10 $0.802 $8.02
30 $0.757 $22.71
100 $0.704 $70.40
500 $0.681 $340.50
1000 $0.670 $670.00

Inventory:9,409

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for R6015ENX or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of R6015ENX

Engineers and designers can trust the quality and durability of the R6015ENX for demanding applications that require high current and voltage ratings. The metal-oxide semiconductor technology used in this FET ensures superior performance and efficiency, essential for modern electronics and power systems. With its compact TO-220AB package, this transistor is easy to handle and mount on PCBs, making it a versatile choice for various power management tasks

Key Features

  • 1) Low on-resistance
  • 2) Fast switching
  • 3) Drive circuits can be simple
  • 4) Parallel use is easy
  • 5) Pb-free plating ; RoHS compliant

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 290mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V
Power Dissipation (Max) 40W (Tc) Operating Temperature 150°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack Base Product Number R6015

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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