• PZT651T1G SOT-223
PZT651T1G SOT-223

PZT651T1G

Bipolar Transistors - BJT 2A 80V NPN

Inventory:5,965

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : PZT651T1G

  • Package/Case : SOT-223

  • Brands : onsemi

  • Components Categories : Bipolar Transistors - BJT

  • Datesheet : PZT651T1G DataSheet (PDF)

Quick Inquiry

Please submit RFQ for PZT651T1G or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of PZT651T1G

The PZT651T1G is a high-voltage NPN Bipolar Junction Transistor (BJT) designed for general-purpose switching and amplification applications. It offers a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA, making it suitable for medium-power electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Connected to the ground reference of the transistor
  • Base (B): Controls the transistor's activation
  • Collector (C): Output terminal for the transistor

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the PZT651T1G BJT for better understanding.

Key Features

  • High-Voltage Capability: Supports a maximum collector-emitter voltage of 80V for diverse circuit requirements.
  • Medium Power: With a continuous collector current of 500mA, it can handle moderate power applications effectively.
  • General-Purpose Use: Suitable for a wide range of switching and amplification tasks in electronic designs.
  • Compact Package: Available in a small SOT-223 package for space-efficient circuit layouts.

Note: For detailed specifications, please consult the PZT651T1G datasheet.

Application

  • Switching Circuits: Ideal for use in various electronic switching circuits.
  • Amplification: Suited for amplification tasks in audio and signal processing systems.
  • Voltage Regulation: Can be employed in voltage regulator circuits for stable power output.

Functionality

The PZT651T1G NPN BJT is designed to control electrical power with its high-voltage handling capabilities. It enables efficient switching and amplification functions in electronic circuits.

Usage Guide

  • Base Connection: Connect the base (B) pin to the controlling signal.
  • Emitter Connection: Ground the emitter (E) pin for proper operation.
  • Collector Connection: Output is taken from the collector (C) pin of the transistor.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage rating of the PZT651T1G?
A: The PZT651T1G can handle a maximum of 80V across its collector-emitter terminals.

Q: Is the PZT651T1G suitable for high-power applications?
A: The PZT651T1G is more suited for medium-power applications due to its 500mA continuous collector current rating.

Equivalent

For similar functionality, consider these alternatives to the PZT651T1G:

  • PZT651T1:A similar NPN BJT with comparable voltage and current ratings.
  • 2N3904:This is a widely used general-purpose NPN transistor with similar characteristics to the PZT651T1G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category Bipolar Transistors - BJT
Mounting Style SMD/SMT Package / Case SOT-223-4
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 2 A Pd - Power Dissipation 800 mW
Gain Bandwidth Product fT 75 MHz Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Series PZT651
Brand onsemi Continuous Collector Current 2 A
DC Collector/Base Gain hfe Min 75 Height 1.57 mm
Length 6.5 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1000 Subcategory Transistors
Technology Si Width 3.5 mm
Unit Weight 0.003951 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

PZT3904

PZT3904

Small signal NPN transistor
SPZTA42T1G

SPZTA42T1G

Tape and Reel Packaging for SPZTA42T1G Automotive NPN Transistor
NTR3A30PZT1G

NTR3A30PZT1G

Packaged in SOT-23 (TO-236) with 3 leads, this Single P-Channel Power MOSFET supports -20V voltage and -2.9A current, available in reels of 3000
PZTA42T1G

PZTA42T1G

The PZTA42T1G is a 500mA, 10V rated NPN SOT-223-3 bipolar transistor, capable of handling up to 300V and dissipating 1
PZT2907AT1G

PZT2907AT1G

PZT2907AT1G is a PNP transistor intended for general-purpose use, featuring a voltage rating of 60V and a current rating of 0
PZTA92T1G

PZTA92T1G

In the SOT-223 package, the PZTA92T1G is a PNP High Voltage Bipolar Transistor that can handle a current of 0.05 A and a voltage of 300 V
PZTA42T1

PZTA42T1

NPN Bipolar Small Signal Transistor, SOT-223 Package, 4 Lead Configuration, 1000-Reel Packaging
IPZ40N04S58R4ATMA1

IPZ40N04S58R4ATMA1

Field-effect transistor suitable for amplifying signals in systems with voltages between 20V and 40V