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OPA657U

Op Amp Single High Speed Amplifier ±6V/12V 8-Pin SOIC Tube

Inventory:8,090

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  • Part Number : OPA657U

  • Package/Case : SOIC-8

  • Brands : TI

  • Components Categories : High-speed op amps (GBW ≥ 50 MHz)

  • Datesheet : OPA657U DataSheet (PDF)

Quick Inquiry

Please submit RFQ for OPA657U or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of OPA657U

The OPA657 device combines a high-gain bandwidth, low-distortion, voltage-feedback operational amplifier with a low-voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision ADC (analog-to-digital converter) driving or wideband transimpedance applications. Photodiode applications see improved noise and bandwidth using this decompensated, high-gain bandwidth amplifier.

Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. Having a high 1.6-GHz gain bandwidth product gives greater than 10-MHz signal bandwidths up to gains of 160 V/V (44 dB). The very low input bias current and capacitance supports this performance even for relatively high source impedances.

Broadband photodetector applications benefit from the low-voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise while for broadband applications, a low voltage noise is also required. The low 4.8 nV/√Hz input voltage noise provides exceptional input sensitivity for higher bandwidth applications. The example shown below gives a total equivalent input noise current of 1.8 pA/√Hz over a 10-MHz bandwidth.

Key Features

  • High Gain Bandwidth Product: 1.6 GHz
  • High Bandwidth 275 MHz (G = 10)
  • Slew Rate 700 V/µs (G = 10, 1-V Step)
  • Available in High Grade With Improved DC
    Specifications
  • Operating Temperature Range: –40°C to 85°C
  • Low-Input Offset Voltage: ±250 µV
  • Low-Input Bias Current: 2 pA
  • Low-Input Voltage Noise: 4.8 nV/√Hz
  • High-Output Current: 70 mA
  • Fast Overdrive Recovery

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Architecture FET / CMOS Input, Voltage FB Number of channels 1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 12
GBW (typ) (MHz) 1600 BW at Acl (MHz) 350
Acl, min spec gain (V/V) 7 Slew rate (typ) (V/µs) 700
Vn at flatband (typ) (nV√Hz) 4.8 Vn at 1 kHz (typ) (nV√Hz) 7
Iq per channel (typ) (mA) 14 Vos (offset voltage at 25°C) (max) (mV) 1.8
Rail-to-rail No Features Decompensated
Rating Catalog Operating temperature range (°C) -40 to 85
CMRR (typ) (dB) 89 Input bias current (max) (pA) 20
Offset drift (typ) (µV/°C) 2 Iout (typ) (mA) 70
2nd harmonic (dBc) 74 3rd harmonic (dBc) 106
Frequency of harmonic distortion measurement (MHz) 5

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Warranty, Returns, and Additional Information

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