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OPA656UB

Achieve wideband stability and high-speed operation with the OPA656UB, a cutting-edge FET-input operational amplifier."

Inventory:5,026

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  • Part Number : OPA656UB

  • Package/Case : SOIC (D)-8

  • Brands : TI

  • Components Categories : High-speed op amps (GBW ≥ 50 MHz)

  • Datesheet : OPA656UB DataSheet (PDF)

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Overview of OPA656UB

The OPA656UB is a high-speed operational amplifier manufactured by Texas Instruments. It offers a wide bandwidth of 750MHz and a fast slew rate of 2100V/µs, making it suitable for applications requiring rapid signal processing. The amplifier operates from a supply voltage ranging from ±2.25V to ±6V, providing flexibility in various circuit designs. With low input voltage noise density of 1.6nV/√Hz and low distortion characteristics, it ensures high-fidelity signal processing. The OPA656UB is designed with a unity-gain stable architecture, allowing it to operate with a stable closed-loop gain even at high frequencies. It features a differential input structure, enabling excellent common-mode rejection ratio (CMRR) performance. This amplifier is commonly used in high-speed communication systems, instrumentation, and test equipment where precision and speed are critical. Its compact package and low power consumption make it suitable for portable and battery-operated devices as well

Key Features

  • The OPA656UB is an operational amplifier (op-amp) featuring high speed, low noise, and wide bandwidth
  • With a unity-gain bandwidth of 3
  • 5 GHz, it offers high slew rate and low distortion
  • It operates on a wide supply voltage range and is suitable for applications requiring precision and fast signal processing, such as high-frequency communications and instrumentation
  • Application

  • The OPA656UB is a high-speed, ultra-low noise operational amplifier suitable for a wide range of applications, including medical instrumentation, industrial control systems, data acquisition systems, and precision measurement equipment
  • Additionally, it can be used in radar systems, high-resolution imaging systems, and automotive safety systems due to its fast response and low distortion characteristics
  • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Architecture FET / CMOS Input, Voltage FB Number of channels 1
    Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 12
    GBW (typ) (MHz) 230 BW at Acl (MHz) 500
    Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 290
    Vn at flatband (typ) (nV√Hz) 7 Vn at 1 kHz (typ) (nV√Hz) 10
    Iq per channel (typ) (mA) 14 Vos (offset voltage at 25°C) (max) (mV) 0.6
    Rail-to-rail No Rating Catalog
    Operating temperature range (°C) -40 to 85 CMRR (typ) (dB) 86
    Input bias current (max) (pA) 5 Offset drift (typ) (µV/°C) 2
    Iout (typ) (mA) 70 2nd harmonic (dBc) 71
    3rd harmonic (dBc) 81 Frequency of harmonic distortion measurement (MHz) 5

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