• OPA2140AIDR SOIC (D)-8
OPA2140AIDR SOIC (D)-8

OPA2140AIDR

JFET technology for high voltage range

Quantity Unit Price(USD) Ext. Price
1 $3.547 $3.55
10 $3.102 $31.02
30 $2.642 $79.26
100 $2.374 $237.40
500 $2.250 $1,125.00
1000 $2.195 $2,195.00

Inventory:7,152

*The price is for reference only.
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  • Part Number : OPA2140AIDR

  • Package/Case : SOIC (D)-8

  • Brands : TI

  • Components Categories : AmplifiersInstrumentation, OP Amps, Buffer Amps

  • Datesheet : OPA2140AIDR DataSheet (PDF)

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Overview of OPA2140AIDR

The OPA2140AIDR is a high-precision, low-noise operational amplifier manufactured by Texas Instruments. It is designed for high-performance audio and other sensitive applications requiring low distortion and noise. This op-amp features a wide bandwidth of 20MHz, a low input voltage noise of 8.8nV/√Hz, and a low offset voltage of 25µV. It also has a low input bias current of 0.3pA, ensuring minimal errors in precision applications. The OPA2140AIDR operates on a supply voltage range of +/-2.25V to +/-18V, making it versatile for a variety of voltage requirements. It comes in a small SOT-23 package, making it suitable for space-constrained applications.

OPA2140AIDR

Key Features

  • The OPA2140AIDR is a precision, low-noise, high-speed operational amplifier with a supply voltage range of 4
  • 5V to 36V, unity gain stable, low offset voltage of 25μV, low input bias current of 2
  • 9pA, and 8MHz bandwidth
  • It is specially designed for applications requiring high precision and low noise
  • Application

  • The OPA2140AIDR is a precision operational amplifier commonly used in applications requiring high accuracy, low noise, and low distortion, such as data acquisition systems, instrumentation, audio equipment, and sensor signal conditioning
  • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36
    Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Vos (offset voltage at 25°C) (max) (mV) 0.12
    GBW (typ) (MHz) 11 Features Small Size
    Slew rate (typ) (V/µs) 20 Rail-to-rail In to V-, Out
    Offset drift (typ) (µV/°C) 0.35 Iq per channel (typ) (mA) 1.8
    Vn at 1 kHz (typ) (nV√Hz) 5.1 CMRR (typ) (dB) 140
    Rating Catalog Operating temperature range (°C) -40 to 125
    Input bias current (max) (pA) 10 Iout (typ) (A) 0.03
    Architecture FET Input common mode headroom (to negative supply) (typ) (V) -0.1
    Input common mode headroom (to positive supply) (typ) (V) -3.5 Output swing headroom (to negative supply) (typ) (V) 0.2
    Output swing headroom (to positive supply) (typ) (V) -0.2 THD + N at 1 kHz (typ) (%) 0.00005

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